Package Type: 440196 and 440166 PN: CGH27030P and CGH27030F CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Crees CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down, flange and solder-down, pill packages. Typical Performance Over 2.3-2.7GHz (T = 25C) of Demonstration Amplifier C Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 15.6 15.5 15.3 15.1 15.2 dB EVM at P = 36 dBm 1.73 1.85 1.85 1.77 1.43 % AVE Drain Efficiency at 36 dBm 28.1 28.7 28.9 27.9 27.5 % Input Return Loss 6.6 6.2 6.0 6.1 7.0 dB Note: Measured in the CGH27030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. Features VHF - 3.0 GHz Operation 30 W Peak Power Capability 15 dB Small Signal Gain 4.0 W P at < 2.0 % EVM AVE 28 % Drain Efficiency at 4 W Average Power WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. 1 www.cree.com/rf Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Power Dissipation P 14 Watts DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4.0 mA 25C GMAX 1 Maximum Drain Current I 3.0 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 4.8 C/W 85C JC 3 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH27030F at P = 14 W DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 7.2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 150 mA GS(Q) DC DS D Saturated Drain Current I 5.8 7.0 - A V = 6.0 V, V = 2 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BR DC GS D 2,3 RF Characteristics (T = 25C, F = 2.5 GHz unless otherwise noted) C 0 Small Signal Gain G 12.5 14.5 dB V = 28 V, I = 150 mA SS DD DQ 4 Drain Efficiency 23.0 28.0 % V = 28 V, I = 150 mA, P = 4 W DD DQ AVE Error Vector Magnitude EVM 2.0 V = 28 V, I = 150 mA, P = 4 W DD DQ AVE No damage at all phase angles, V = 28 V, I = 150 mA Output Mismatch Stress VSWR 10 : 1 Y DD DQ P = 4.0 W OFDM P AVE AVE 5 Dynamic Characteristics Input Capacitance C 9.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 2.6 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.4 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH27030F-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. 4 Drain Efficiency = P / P OUT DC. 5 Capacitance values include package parasitics. Cree, Inc. 4600 Silicon Drive Copyright 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH27030F Rev 4.0