X-On Electronics has gained recognition as a prominent supplier of CGH27030P RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGH27030P RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGH27030P Wolfspeed

CGH27030P electronic component of Wolfspeed
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Part No.CGH27030P
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors GaN HEMT VHF-3.0GHz, 30 Watt
Datasheet: CGH27030P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 109.846 ea
Line Total: USD 109.85 
Availability - 48
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 109.846
10 : USD 109.835
50 : USD 109.824
500 : USD 109.813
1000 : USD 109.802
2500 : USD 109.747

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Brand
Forward Transconductance - Min
Nf - Noise Figure
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CGH27030P from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGH27030P and other electronic components in the RF JFET Transistors category and beyond.

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Package Type: 440196 and 440166 PN: CGH27030P and CGH27030F CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Crees CGH27030 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down, flange and solder-down, pill packages. Typical Performance Over 2.3-2.7GHz (T = 25C) of Demonstration Amplifier C Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal Gain 15.6 15.5 15.3 15.1 15.2 dB EVM at P = 36 dBm 1.73 1.85 1.85 1.77 1.43 % AVE Drain Efficiency at 36 dBm 28.1 28.7 28.9 27.9 27.5 % Input Return Loss 6.6 6.2 6.0 6.1 7.0 dB Note: Measured in the CGH27030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. Features VHF - 3.0 GHz Operation 30 W Peak Power Capability 15 dB Small Signal Gain 4.0 W P at < 2.0 % EVM AVE 28 % Drain Efficiency at 4 W Average Power WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA Subject to change without notice. 1 www.cree.com/rf Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Power Dissipation P 14 Watts DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4.0 mA 25C GMAX 1 Maximum Drain Current I 3.0 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 4.8 C/W 85C JC 3 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH27030F at P = 14 W DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 7.2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 150 mA GS(Q) DC DS D Saturated Drain Current I 5.8 7.0 - A V = 6.0 V, V = 2 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BR DC GS D 2,3 RF Characteristics (T = 25C, F = 2.5 GHz unless otherwise noted) C 0 Small Signal Gain G 12.5 14.5 dB V = 28 V, I = 150 mA SS DD DQ 4 Drain Efficiency 23.0 28.0 % V = 28 V, I = 150 mA, P = 4 W DD DQ AVE Error Vector Magnitude EVM 2.0 V = 28 V, I = 150 mA, P = 4 W DD DQ AVE No damage at all phase angles, V = 28 V, I = 150 mA Output Mismatch Stress VSWR 10 : 1 Y DD DQ P = 4.0 W OFDM P AVE AVE 5 Dynamic Characteristics Input Capacitance C 9.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 2.6 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.4 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH27030F-AMP test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB 0.01 % Probability on CCDF. 4 Drain Efficiency = P / P OUT DC. 5 Capacitance values include package parasitics. Cree, Inc. 4600 Silicon Drive Copyright 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH27030F Rev 4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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