CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description Crees CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange Package Types: 440166 & 440196 PNs: CGH40010F & CGH40010P and solder-down, pill packages. Features Applications Up to 6 GHz Operation 2-Way Private Radio 16 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers 14 dB Small Signal Gain at 4.0 GHz Cellular Infrastructure 13 W typical PSAT Test Instrumentation 65 % Efficiency at PSAT Class A, AB, Linear amplifiers suitable for OFDM, 28 V Operation W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO Rev 4.3 October 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGH40010 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 120 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4.0 mA 25C GMAX 1 Maximum Drain Current I 1.5 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Thermal Resistance, Junction to Case R 8.0 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40010F at PDISS = 14 W. 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (TC = 25C) Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 3.6 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 200 mA GS(Q) DC DS D Saturated Drain Current I 2.9 3.5 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 3.6 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 3.7 GHz unless otherwise noted) C 0 Small Signal Gain G 12.5 14.5 dB V = 28 V, I = 200 mA SS DD DQ 3 Power Output P 10 12.5 W V = 28 V, I = 200 mA SAT DD DQ 4 Drain Efficiency 55 65 % V = 28 V, I = 200 mA, P DD DQ SAT No damage at all phase angles, V = 28 V, I = 200 DD DQ Output Mismatch Stress VSWR 10 : 1 Y mA, P = 10 W CW OUT Dynamic Characteristics Input Capacitance C 4.5 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 1.3 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.2 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40010-AMP. 3 P is defined as I = 0.36 mA. SAT G 4 Drain Efficiency = P / P OUT DC Rev 4.3 October 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com