CGH40090PP 90 W, RF Power GaN HEMT Description Crees CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange Package Types: 440199 PNs: CGH40090PP package. Typical Performance Over 500 MHz - 2.5 GHz (T = 25C) of Demonstration Amplifier C Parameter 500 GHz 1.0 GHz 1.5 GHz 2.0GHz 2.5 GHz Units Small Signal Gain 17.6 15.6 14.1 12.4 12.4 dB Gain at P 13.7 11.7 9.2 7.0 10.4 dB SAT Saturated Power 66.8 102.7 91.4 101.7 57.0 W Drain Efficiency at P 48.5 57.0 56.6 59.2 37.3 % SAT Input Return Loss 7.3 23.0 14.9 14.3 11.3 dB Features Up to 2.5 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 100 W Typical P SAT 55% Efficiency at P SAT 28 V Operation Large Signal Models Available for ADS and MWO Rev. 5.2, March 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGH40090PP 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 120 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 28 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Thermal Resistance, Junction to Case R 1.45 C/W 85C JC 3,4 Case Operating Temperature T -40, +85 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/RF/Document-Library 3 Measured for the CGH40090PP at P = 112 W DISS 4 See also, the Power Dissipation De-rating Curve on Page 6 Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 1.0 A GS(Q) DC DS D 2 Saturated Drain Current I 20.2 28.2 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 28.8 mA BR DC GS D 3,4 RF Characteristics (T = 25C, F = 2.0 GHz unless otherwise noted) C 0 Small Signal Gain G 12 12.5 dB V = 28 V, I = 1.0 A SS DD DQ 5 Power Output P 80 100 W V = 28 V, I = 1.0 A SAT DD DQ 6 Drain Efficiency 45 55 % V = 28 V, I = 1.0 A, P = P DD DQ OUT SAT No damage at all phase angles, V = 28 V, I = 1.0 A, Y DD DQ Output Mismatch Stress VSWR 10 : 1 P = 90 W CW OUT Dynamic Characteristics Input Capacitance C 19.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 5.9 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.8 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 5 Measured on wafer prior to packaging P is defined as: Q1 or Q2 = I = 14 mA SAT G 2 6 Scaled from PCM data Drain Efficiency = P / P OUT DC 3 7 Measured in CGH40090PP-AMP Capacitance values are for each side of the device 4 I of 1.0 A is by biasing each device at 0.5 A DQ Rev 5.2 March 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com