Package Types: 440199
PN: CGH40180PP
CGH40180PP
180 W, RF Power GaN HEMT
Crees CGH40180PP is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40180PP ideal for linear
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
FEATURES APPLICATIONS
Up to 2.5 GHz Operation 2-Way Private Radio
20 dB Small Signal Gain at 1.0 GHz Broadband Amplifiers
15 dB Small Signal Gain at 2.0 GHz Cellular Infrastructure
220 W typical P Test Instrumentation
SAT
70 % Efficiency at P Class A, AB, Linear amplifiers suitable for
SAT
28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
1
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Rev 3.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage V 84 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 60 mA 25C
GMAX
1
Maximum Drain Current I 24 A 25C
DMAX
2
Soldering Temperature T 245 C
S
Screw Torque 80 in-oz
3
Thermal Resistance, Junction to Case R 0.9 C/W 85C
JC
3,4
Case Operating Temperature T -40, +150 C
C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
CGH40180PP at P = 224 W.
DISS
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 57.6 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 28 V, I = 2.0 A
GS(Q) DC DS D
2
Saturated Drain Current I 46.4 56.0 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 57.6 mA
BR DC GS D
3,4
RF Characteristics (T = 25C, F = 1.3 GHz unless otherwise noted)
C 0
Power Gain P 13 - - dB V = 28 V, I = 2.0 A, P = P
G DD DQ OUT SAT
Small Signal Gain G - 19 dB V = 28 V, I = 2.0 A
SS DD DQ
5
Power Output at Saturation P 180 220 W V = 28 V, I = 2.0 A
SAT DD DQ
6
Drain Efficiency 56 65 % V = 28 V, I = 2.0 A, P = P
DD DQ OUT SAT
No damage at all phase angles,
Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 2.0 A,
DD DQ
P = 180 W CW
OUT
7
Dynamic Characteristics
Input Capacitance C 35.7 pF V = 28 V, V = -8 V, f = 1 MHz
GS DS gs
Output Capacitance C 9.6 pF V = 28 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 1.6 pF V = 28 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGH40180PP-AMP, including all coupler losses.
4
I of 2.0 A is by biasing each device at 1.0 A.
DQ
5
P is defined as: Q1 or Q2 = I = 2.8 mA.
SAT G
6
Drain Efficiency = P / P
OUT DC
7
Capacitance values are for each side of the device.
Cree, Inc.
4600 Silicon Drive
Copyright 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
2 CGH40180PP Rev 3.0
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