CGH40180PP 180 W, RF Power GaN HEMT Description Crees CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange Package Types: 440199 PN: CGH40180PP package. Features Applications Up to 2.5 GHz Operation 2-Way Private Radio 20 dB Small Signal Gain at 1.0 GHz Broadband Amplifiers 15 dB Small Signal Gain at 2.0 GHz Cellular Infrastructure 220 W typical P Test Instrumentation SAT 70% Efficiency at P Class A, AB, Linear amplifiers suitable for OFDM, SAT 28 V Operation W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO Rev 3.2 July 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGH40180PP 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 120 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 60 mA 25C GMAX 1 Maximum Drain Current I 24 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Thermal Resistance, Junction to Case R 0.9 C/W 85C JC 3,4 Case Operating Temperature T -40, +85 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at wolfspeed.com/RF/Document-Library 3 CGH40180PP at P = 224 W DISS 4 See also, the Power Dissipation De-rating Curve on Page 6 Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 57.6 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 2.0 A GS(Q) DC DS D 2 Saturated Drain Current I 40.3 56.4 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 57.6 mA BR DC GS D 3,4 RF Characteristics (T = 25C, F = 1.3 GHz unless otherwise noted) C 0 Power Gain P 13 - - dB V = 28 V, I = 2.0 A, P = P G DD DQ OUT SAT Small Signal Gain G - 19 dB V = 28 V, I = 2.0 A SS DD DQ 5 Power Output at Saturation P 180 220 W V = 28 V, I = 2.0 A SAT DD DQ 6 Drain Efficiency 56 65 % V = 28 V, I = 2.0 A, P = P DD DQ OUT SAT No damage at all phase angles, V = 28 V, I = 2.0 A, Output Mismatch Stress VSWR 10 : 1 Y DD DQ P = 180 W CW OUT 7 Dynamic Characteristics Input Capacitance C 35.7 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 9.6 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 1.6 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 5 Measured on wafer prior to packaging P is defined as: Q1 or Q2 = I = 2.8 mA SAT G 2 6 Scaled from PCM data Drain Efficiency = P / P OUT DC 3 7 Measured in CGH40180PP-AMP, including all coupler losses Capacitance values are for each side of the device 4 I of 2.0 A is by biasing each device at 1.0 A DQ Rev 3.2 July 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com