X-On Electronics has gained recognition as a prominent supplier of CGHV60075D5 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGHV60075D5 RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGHV60075D5 Wolfspeed

CGHV60075D5 electronic component of Wolfspeed
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Part No.CGHV60075D5
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
Datasheet: CGHV60075D5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 68.409 ea
Line Total: USD 684.09 
Availability - 19
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
19
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 10
Multiples : 10
10 : USD 68.409
100 : USD 63.327

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Application
Configuration
Operating Temperature Range
Brand
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Class
Development Kit
Nf - Noise Figure
P1db - Compression Point
Rds On - Drain-Source Resistance
Vgs Th - Gate-Source Threshold Voltage
Height
Length
Product
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CGHV60075D5 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGHV60075D5 and other electronic components in the RF JFET Transistors category and beyond.

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CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Description Crees CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. Features Applications 19 dB Typical Small Signal Gain at 4 GHz 2-Way Private Radio 17 dB Typical Small Signal Gain at 6 GHz Broadband Amplifiers 65% Typical Power Added Efficiency at 4 GHz Cellular Infrastructure 60% Typical Power Added Efficiency at 6 GHz Test Instrumentation 75 W Typical P Class A, AB, Linear amplifiers suitable for OFDM, SAT 50 V Operation W-CDMA, EDGE, CDMA waveforms High Breakdown Voltage Up to 6 GHz Operation Packaging Information Bare die are shipped in Gel-Pak containers Non-adhesive tacky membrane immobilizes die during shipment Large Signal Models Available for ADS and MWO Rev 1.2 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV60075D5 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 V 25C DSS DC Gate-to-Source Voltage V -10, +2 V 25C GS DC Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J 1 Maximum Drain Current I 6.3 A 25C MAX Maximum Forward Gate Current I 10 mA 25C GMAX 2 Thermal Resistance, Junction to Case (packaged) R 2.67 C/W 85C, 41.6W Dissipation JC Thermal Resistance, Junction to Case (die only) R 1.66 C/W 85C, 41.6W Dissipation JC Mounting Temperature T 320 C 30 seconds s Notes: 1 Current limit for long term, reliable operation 2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier Electrical Characteristics (Frequency = 6 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Pinch-Off Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 10 mA P DS D 1 Drain Current I 8 10 A V = 6 V, V = 2.0 V DSS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 10 mA BD GS D On Resistance R 0.28 V = 0.1 V ON DS Gate Forward Voltage V 1.9 V I = 10 mA G-ON GS RF Characteristics Small Signal Gain G 17 dB V = 50 V, I = 125 mA SS DD DQ 2,3 Saturated Power Output P 75 W V = 50 V, I = 125 mA SAT DD DQ 3 Drain Efficiency 60 % V = 50 V, I = 125 mA,= P = 75 W DD DQ SAT Intermodulation Distortion IM3 -30 dBc V = 50 V, I = 125 mA, P = 75 W PEP DD DQ OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 50 V, I = 125 mA , P = 75 W CW DD DQ OUT Dynamic Characteristics Input Capacitance C 9.51 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 3.6 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.26 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Scaled from PCM data 2 P is defined as I = 1.0 mA SAT G 3 Drain Efficiency = P / P OUT DC Rev 1.2 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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