CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Description Crees CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. Features Applications 19 dB Typical Small Signal Gain at 4 GHz 2-Way Private Radio 17 dB Typical Small Signal Gain at 6 GHz Broadband Amplifiers 65% Typical Power Added Efficiency at 4 GHz Cellular Infrastructure 60% Typical Power Added Efficiency at 6 GHz Test Instrumentation 75 W Typical P Class A, AB, Linear amplifiers suitable for OFDM, SAT 50 V Operation W-CDMA, EDGE, CDMA waveforms High Breakdown Voltage Up to 6 GHz Operation Packaging Information Bare die are shipped in Gel-Pak containers Non-adhesive tacky membrane immobilizes die during shipment Large Signal Models Available for ADS and MWO Rev 1.2 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV60075D5 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 V 25C DSS DC Gate-to-Source Voltage V -10, +2 V 25C GS DC Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J 1 Maximum Drain Current I 6.3 A 25C MAX Maximum Forward Gate Current I 10 mA 25C GMAX 2 Thermal Resistance, Junction to Case (packaged) R 2.67 C/W 85C, 41.6W Dissipation JC Thermal Resistance, Junction to Case (die only) R 1.66 C/W 85C, 41.6W Dissipation JC Mounting Temperature T 320 C 30 seconds s Notes: 1 Current limit for long term, reliable operation 2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier Electrical Characteristics (Frequency = 6 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Pinch-Off Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 10 mA P DS D 1 Drain Current I 8 10 A V = 6 V, V = 2.0 V DSS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 10 mA BD GS D On Resistance R 0.28 V = 0.1 V ON DS Gate Forward Voltage V 1.9 V I = 10 mA G-ON GS RF Characteristics Small Signal Gain G 17 dB V = 50 V, I = 125 mA SS DD DQ 2,3 Saturated Power Output P 75 W V = 50 V, I = 125 mA SAT DD DQ 3 Drain Efficiency 60 % V = 50 V, I = 125 mA,= P = 75 W DD DQ SAT Intermodulation Distortion IM3 -30 dBc V = 50 V, I = 125 mA, P = 75 W PEP DD DQ OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 50 V, I = 125 mA , P = 75 W CW DD DQ OUT Dynamic Characteristics Input Capacitance C 9.51 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 3.6 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.26 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Scaled from PCM data 2 P is defined as I = 1.0 mA SAT G 3 Drain Efficiency = P / P OUT DC Rev 1.2 April 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com