CGH40120F 120 W, RF Power GaN HEMT Description Crees CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Package Types: 440193 PN: CGH40120F Features Applications Up to 2.5 GHz Operation 2-Way Private Radio 20 dB Small Signal Gain at 1.0 GHz Broadband Amplifiers 15 dB Small Signal Gain at 2.0 GHz Cellular Infrastructure 120 W Typical P Test Instrumentation SAT 70 % Efficiency at P Class A, AB, Linear amplifiers suitable for OFDM, SAT 28 V Operation W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO Rev 4.1 - March 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGH40120F 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 120 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 30 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Thermal Resistance, Junction to Case R 1.39 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.wolfspeed.com/rf/document-library 3 Measured for the CGH40120F at P = 115 W DISS 4 See also, the Power Dissipation De-rating Curve on Page 7 Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 1.0 A GS(Q) DC DS D 2 Saturated Drain Current I 20.2 28.2 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 28.8 mA BR DC GS D 3 RF Characteristics (T = 25C, F = 1.3 GHz unless otherwise noted) C 0 Small Signal Gain G 17.5 19 dB V = 28 V, I = 1.0 A SS DD DQ 4 Power Output P 100 120 W V = 28 V, I = 1.0 A SAT DD DQ 5 Drain Efficiency 55 70 % V = 28 V, I = 1.0 A, P = P DD DQ OUT SAT No damage at all phase angles, V = 28 V, I = 1.0 A, DD DQ Output Mismatch Stress VSWR 10 : 1 Y P = 100 W CW OUT Dynamic Characteristics Input Capacitance C 35.3 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 9.1 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 1.6 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGH40120F-AMP 4 P is defined as I = 2.8 mA SAT G 5 Drain Efficiency = P / P OUT DC Rev 4.1 - March 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com