Package Type: 440196 and 440166 PN: CGH40025P and CGH40025F CGH40025 25 W, RF Power GaN HEMT Crees CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages. FEATURES APPLICATIONS Up to 6 GHz Operation 2-Way Private Radio 15 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers 13 dB Small Signal Gain at 4.0 GHz Cellular Infrastructure 30 W typical P Test Instrumentation SAT 62 % Efficiency at P Class A, AB, Linear amplifiers suitable for SAT 28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms Subject to change without notice. 1 www.cree.com/wireless Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 7.0 mA 25C GMAX 1 Maximum Drain Current I 3 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 60 in-oz 3 Thermal Resistance, Junction to Case R 4.8 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www,cree.com/RF/Document-Library 3 Measured for the CGH40025F at P = 28 W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 7.2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 250 mA GS(Q) DC DS D Saturated Drain Current I 5.8 7.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 7.2 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 3.7 GHz unless otherwise noted) C 0 Small Signal Gain G 12 13 dB V = 28 V, I = 250 mA SS DD DQ 3 Power Output P 20 30 W V = 28 V, I = 250 mA SAT DD DQ 4 Drain Efficiency 55 62 % V = 28 V, I = 250 mA, P DD DQ SAT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 250 mA, DD DQ P = 25 W CW OUT Dynamic Characteristics Input Capacitance C 9.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 2.6 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.4 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40025-AMP. 3 P is defined as I = 0.72 mA. SAT G 4 Drain Efficiency = P / P OUT DC Cree, Inc. 4600 Silicon Drive Copyright 2007-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH40025 Rev 4.0