X-On Electronics has gained recognition as a prominent supplier of CGH40090PP RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGH40090PP RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGH40090PP Wolfspeed

CGH40090PP electronic component of Wolfspeed
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Part No.CGH40090PP
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors DC-4GHz 28V 90W Gain 12.5dB GaN HEMT
Datasheet: CGH40090PP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 430.376 ea
Line Total: USD 43037.6 
Availability - 0
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 100
Multiples : 100
100 : USD 430.376
260 : USD 430.3185
500 : USD 430.307
1000 : USD 430.192
2500 : USD 430.1575

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Application
Configuration
Height
Length
Operating Temperature Range
Product
Type
Width
Brand
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Number Of Channels
Class
Development Kit
Fall Time
Nf - Noise Figure
P1db - Compression Point
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CGH40090PP from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGH40090PP and other electronic components in the RF JFET Transistors category and beyond.

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Package Types: 440199 PN: CGH40090PP CGH40090PP 90 W, RF Power GaN HEMT Crees CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Typical Performance Over 500 MHz - 2.5 GHz (T = 25C) of Demonstration Amplifier C Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units Small Signal Gain 17.6 15.6 14.1 12.4 12.4 dB Gain at P 13.7 11.7 9.2 7.0 10.4 dB SAT Saturated Power 66.8 102.7 91.4 101.7 57.0 W Drain Efficiency at P 48.5 57.0 56.6 59.2 37.3 % SAT Input Return Loss 7.3 23.0 14.9 14.3 11.3 dB Features Up to 2.5 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 100 W Typical P SAT 55 % Efficiency at P SAT 28 V Operation Subject to change without notice. 1 www.cree.com/rf Rev 5.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 28 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 80 in-oz 3 Thermal Resistance, Junction to Case R 1.45 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40090PP at P = 112W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 1.0 A GS(Q) DC DS D 2 Saturated Drain Current I 23.2 28.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 28.8 mA BR DC GS D 3,4 RF Characteristics (T = 25C, F = 2.0 GHz unless otherwise noted) C 0 Small Signal Gain G 12 12.5 dB V = 28 V, I = 1.0 A SS DD DQ 5 Power Output at Saturation P 80 100 W V = 28 V, I = 1.0 A SAT DD DQ 6 Drain Efficiency 45 55 % V = 28 V, I = 1.0 A, P = P DD DQ OUT SAT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 1.0 A, DD DQ P = 90 W CW OUT 7 Dynamic Characteristics Input Capacitance C 19.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 5.9 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.8 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40090PP-AMP 4 I of 1.0 A is by biasing each device at 0.5 A. DQ 5 P is defined as: Q1 or Q2 = I = 14 mA. SAT G 6 Drain Efficiency = P / P OUT DC 7 Capacitance values are for each side of the device. Cree, Inc. 4600 Silicon Drive Copyright 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 2 CGH40090PP Rev 5.0 www.cree.com/rf

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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