Package Types: 440199 PN: CGH40090PP CGH40090PP 90 W, RF Power GaN HEMT Crees CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package. Typical Performance Over 500 MHz - 2.5 GHz (T = 25C) of Demonstration Amplifier C Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units Small Signal Gain 17.6 15.6 14.1 12.4 12.4 dB Gain at P 13.7 11.7 9.2 7.0 10.4 dB SAT Saturated Power 66.8 102.7 91.4 101.7 57.0 W Drain Efficiency at P 48.5 57.0 56.6 59.2 37.3 % SAT Input Return Loss 7.3 23.0 14.9 14.3 11.3 dB Features Up to 2.5 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 100 W Typical P SAT 55 % Efficiency at P SAT 28 V Operation Subject to change without notice. 1 www.cree.com/rf Rev 5.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 28 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 80 in-oz 3 Thermal Resistance, Junction to Case R 1.45 C/W 85C JC 3,4 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40090PP at P = 112W. DISS 4 See also, the Power Dissipation De-rating Curve on Page 6. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 1.0 A GS(Q) DC DS D 2 Saturated Drain Current I 23.2 28.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 28.8 mA BR DC GS D 3,4 RF Characteristics (T = 25C, F = 2.0 GHz unless otherwise noted) C 0 Small Signal Gain G 12 12.5 dB V = 28 V, I = 1.0 A SS DD DQ 5 Power Output at Saturation P 80 100 W V = 28 V, I = 1.0 A SAT DD DQ 6 Drain Efficiency 45 55 % V = 28 V, I = 1.0 A, P = P DD DQ OUT SAT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 1.0 A, DD DQ P = 90 W CW OUT 7 Dynamic Characteristics Input Capacitance C 19.0 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 5.9 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.8 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40090PP-AMP 4 I of 1.0 A is by biasing each device at 0.5 A. DQ 5 P is defined as: Q1 or Q2 = I = 14 mA. SAT G 6 Drain Efficiency = P / P OUT DC 7 Capacitance values are for each side of the device. Cree, Inc. 4600 Silicon Drive Copyright 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.CREE Fax: +1.919.869.2733 2 CGH40090PP Rev 5.0 www.cree.com/rf