Package Type: 440193
PN: CGH40035F
CGH40035F
35 W, DC - 4 GHz, RF Power GaN HEMT
Crees CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the
CGH40035F ideal for linear and compressed amplifier circuits. The transistor is
available in a screw-down, flange package.
FEATURES APPLICATIONS
Up to 4 GHz Operation 2-Way Private Radio
15 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers
13 dB Small Signal Gain at 4.0 GHz Cellular Infrastructure
45 W typical P Test Instrumentation
SAT
60 % Efficiency at P Class A, AB, Linear amplifiers suitable for
SAT
28 V Operation OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
1
www.cree.com/rf
Rev 4.0 May 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage V 84 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 10.0 mA 25C
GMAX
1
Maximum Drain Current I 4.5 A 25C
DMAX
2
Soldering Temperature T 245 C
S
Screw Torque 80 in-oz
3
Thermal Resistance, Junction to Case R 3.0 C/W 85C
JC
3,4
Case Operating Temperature T -40, +150 C
C
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/RF/Document-Library
3
Measured for the CGH40035F at P = 42 W.
DISS
4
See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (T = 25C)
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 10.8 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 28 V, I = 500 mA
GS(Q) DC DS D
Saturated Drain Current I 8.7 10.5 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 10.8 mA
BR DC GS D
2
RF Characteristics (T = 25C, F = 3.5 GHz unless otherwise noted)
C 0
Small Signal Gain G 13 14 dB V = 28 V, I = 500 mA
SS DD DQ
3
Power Output P 30 45 W V = 28 V, I = 500 mA
SAT DD DQ
4
Drain Efficiency 50 60 % V = 28 V, I = 500 mA, P
DD DQ SAT
No damage at all phase angles,
Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 500 mA,
DD DQ
P = 35 W CW
OUT
Dynamic Characteristics
Input Capacitance C 14.7 pF V = 28 V, V = -8 V, f = 1 MHz
GS DS gs
Output Capacitance C 4.9 pF V = 28 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 0.6 pF V = 28 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging.
2
Measured in CGH40035F-AMP
3
P is defined as I = 1.08 mA.
SAT G
4
Drain Efficiency = P / P
OUT DC
Cree, Inc.
4600 Silicon Drive
Copyright 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
www.cree.com/rf
2 CGH40035F Rev 4.0