CGH40006S 6 W, RF Power GaN HEMT, Plastic Description Crees CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x Package Type: 440203 3mm, surface mount, quad-flat-no-lead (QFN) package. PN: CGH40006S Features Applications Up to 6 GHz Operation 2-Way Private Radio 13 dB Small Signal Gain at 2.0 GHz Broadband Amplifiers 11 dB Small Signal Gain at 6.0 GHz Cellular Infrastructure 8 W typical at P = 32 dBm Test Instrumentation IN 65% Efficiency at P = 32 dBm Class A, AB, Linear amplifiers suitable for OFDM, IN 28 V Operation W-CDMA, EDGE, CDMA waveforms 3mm x 3mm Package Large Signal Models Available for ADS and MWO Rev 3.3 July 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGH40006S 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 120 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 175 C J Maximum Forward Gate Current I 2.1 mA 25C GMAX 1 Maximum Drain Current I 0.75 A 25C DMAX 2 Soldering Temperature T 260 C S 3, 4 Thermal Resistance, Junction to Case R 10.1 C/W 85C JC 3, 4 Case Operating Temperature T -40, +150 C C 4 Notes: T = Case temperature for the device. It refers to the temperature at the C 1 Current limit for long term, reliable operation ground tab underneath the package. The PCB will add additional thermal 2 Refer to the Application Note on soldering at resistance. The RTH for Crees demonstration amplifier, CGH40006S- www.wolfspeed.com/rf/document-library AMP1, with 13 (20 mil) via holes designed on a 20 mil thick Rogers 5880 3 Measured for the CGH40006S at P = 8 W. PCB, is 5.1C. The total Rth from the heat sink to the junction is 10.1C DISS +5.1C = 15.2 C/W. Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 132.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 800 mA GS(Q) DC DS D Saturated Drain Current I 1.5 2.1 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 132.8 mA BR DC GS D 2 RF Characteristics (T = 25C, F = 5.8 GHz unless otherwise noted) C 0 Small Signal Gain G 10 11.8 dB V = 28 V, I = 100 mA SS DD DQ Power Output at P = 30 dBm P 5 6.9 W V = 28 V, I = 100 mA IN OUT DD DQ 3 Drain Efficiency 40 53 % V = 28 V, I = 100 mA, P = 30 dBm DD DQ IN No damage at all phase angles, V = 28 V, Output Mismatch Stress VSWR 10 : 1 Y DD I = 100 mA, P = 32 dBm DQ IN Dynamic Characteristics Input Capacitance C 2.7 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 0.8 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.1 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Measured in Crees narrow band production test fixture AD-000291. This fixture is designed for high volume test at 5.8 GHz and may not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006S-AMP1, is a better indicator of the true RF performance of the device. 3 Drain Efficiency = P / P OUT DC Rev 3.3 July 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com