QPD0030 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations. 20 Pin 3x4mm QFN Package The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can Key Features also be used as a driver in a macrocell base station power Operating Frequency Range: DC to 5GHz amplifier. Operating Drain Voltage: +48V The device is housed in an industry-standard 4x3 mm (1) Maximum Output Power (P ): 49.0W SAT surface mount QFN package. (1) Maximum Drain Efficiency: 71.9% (1) Efficiency-Tuned P3dB Gain: 22.1dB Lead-free and ROHS compliant. Surface Mount Plastic Package Notes: 1. Load pull performance at 2.2 GHz. Functional Block Diagram Applications W-CDMA / LTE Macrocell Base Station Driver Small Cell Final Stage Active Antenna Land Mobile and Military Radio Communications Wideband or Narrowband Amplifiers General Purpose Applications Ordering Information Part Number Description QPD0030SR Short Reel 100 Pieces QPD0030TR7 7 Reel 500 pieces QPD0030EVB01 1.2 1.4 GHz Evaluation Board QPD0030EVB02 1.8 2.2 GHz Evaluation Board Data Sheet Rev. D, October 7, 2019 Subject to change without notice 1 of 12 www.qorvo.com QPD0030 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Unit Breakdown Voltage (BVDG) +165 V Gate Voltage (VG) 2.8 V Gate Voltage Range (VG) 7 to +2 V Drain Voltage (VD) +48 V Drain Voltage (VD) +55 V Quiescent Drain Current (IDQ) 85 mA Peak RF Input Power 33 dBm Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating VSWR Mismatch, P1dB Pulse (20% conditions. 10:1 Duty Cycle, 100 s Width), T = +25C Storage Temperature 65 to +150C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. QPD0030EVB01 Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 1200 1400 MHz Quiescent Drain Current (IDQ) 90 mA Linear Gain POUT = 34 dBm 19.9 dB Output Power (P3dB) 3 dB Compression 45.6 dBm Power-Added Efficiency (%) 3 dB Compression 74.2 % Gain 3 dB Compression 16.9 dB Test conditions unless otherwise noted: V = +48V, I = 90 mA, T=+25C, Pulse signal (10% Duty Cycle, 100 s Width) at 1300 MHz on a D DQ Class AB single-ended reference design fixture tuned for 1.2 1.4 GHz. QPD0030EVB02 Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 1800 2200 MHz Quiescent Drain Current (IDQ) 85 mA Linear Gain POUT = 34 dBm 18.4 20.2 dB Output Power (P3dB) 3 dB Compression 43.9 45.2 dBm Power-Added Efficiency (%) 3 dB Compression 46.0 57.5 % Gain 3 dB Compression 14.6 16.3 dB Gate Leakage V = +48 V, V = 7 V -13.9 mA D G Test conditions unless otherwise noted: V = +48V, I = 85 mA, T=+25C, Pulse signal (10% Duty Cycle, 100 s Width) at 2005 MHz on a D DQ Class AB single-ended reference design fixture tuned for 1.8 2.2 GHz. Thermal Information Parameter Conditions Values Units Thermal Resistance, Peak IR Surface TCASE = +85C, TCH = 114C 3.0 C/W Temperature at Average Power ( ) CW: P = 9.6 W, P = 2.1 W JC DISS OUT Notes: 1. Thermal resistance is measured to package backside. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Data Sheet Rev. D, October 7, 2019 Subject to change without notice 2 of 12 www.qorvo.com