QPD1000 15W, 28V, 0.03 1.215 GHz, GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1000 is a 15W (P ), 50 -input matched 3dB discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant 5 x6x1.09mm QFN Evaluation boards are available upon request. Key Features Frequency: 30 MHz to 1.215 GHz 1 Output Power (P ) : 24 W 3dB Functional Block Diagram 1 Linear Gain : 19 dB 1 Typical PAE3dB : 78 % Operating Voltage: 28 V Low thermal resistance package 1 8 CW and Pulse capable 5 x 6 mm package 7 2 Input Note 1: 1 GHz Matching NW 6 3 Applications 5 4 Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. Description QPD1000 0.031.215GHz RF Transistor QPD1000PCB4B01 0.05 1.00 GHz EVB QPD1000PCB4B02 0.20 1.20 GHz EVB Datasheet Rev. F, June, 2021 Subject to change without notice - 1 of 25 - www.qorvo.com QPD1000 15W, 28V, 0.03 1.215 GHz, GaN RF Input-Matched Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +100 V Drain Voltage Range, VD +12 +28 +32 V Gate Voltage Range, V 7 to +2 V G Drain Bias Current, IDQ 50 mA Drain Current 3 A 2 Gate Voltage, V 4 2.8 1 V G Power Dissipation, CW, PDISS 32.4 W Notes: RF Input Power, CW, 1 GHz, +30 dBm 1. Electrical performance is measured under conditions noted T = 25C in the electrical specifications table. Specifications are not Storage Temperature 65 to +150 C guaranteed over all recommended operating conditions. 2. To be adjusted to desired I DQ Notes: 1. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. 1 Pulsed Characterization Load-Pull Performance Power Tuned Parameters Typical Values Unit Frequency, F 0.6 0.8 1.0 1.2 GHz Linear Gain, GLIN 19.9 20.0 19.0 17.2 dB Output Power at 3dB 43.7 43.8 43.8 43.8 dBm compression point, P3dB Power-Added-Efficiency at 3dB 62.4 56.5 61.6 59.5 % compression point, PAE 3dB Gain at 3dB compression point 16.9 17.0 16.0 14.2 dB Notes: 1. Test conditions unless otherwise noted: VD = +28V, IDQ = 50mA, Temp = +25C 1 Pulsed Characterization Load-Pull Performance Efficiency Tuned Parameters Typical Values Unit Frequency, F 0.6 0.8 1.0 1.2 GHz Linear Gain, GLIN 20.4 20.9 19.3 17.1 dB Output Power at 3dB 41.9 41.5 41.1 41.0 dBm compression point, P 3dB Power-Added-Efficiency at 3dB 72.4 74.6 78.2 71.1 % compression point, PAE3dB Gain at 3dB compression point, 17.4 17.9 16.3 14.1 dB G 3dB Notes: 1. Test conditions unless otherwise noted: VD = +28V, IDQ = 50mA, Temp = +25C Datasheet Rev. F, June, 2021 Subject to change without notice - 2 of 25 - www.qorvo.com