QPD1004 25W, 50V, 30 1400 MHz, GaN RF Input-Matched Transistor General Description The QPD1004 is a 25W (P3dB), 50-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1400MHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. It is ideally suited for basestation, radar and communications applications and can support both CW and pulsed mode of operations. 8 Pin DFN (6 x5x0.85mm) The device is housed in an industry-standard 6 x 5 mm Product Features surface mount DFN package. Frequency: 30 to 1400 MHz 1 Lead-free and ROHS compliant Output Power (P3dB): 40 W 1 Linear Gain: 20.8 dB 1 Evaluation boards are available upon request. Typical PAE : 73.2% 3dB Operating Voltage: 50 V Functional Block Diagram Low thermal resistance package CW and Pulse capable 6 x 5 mm package Note 1: 1.0 GHz (Loadpull) Applications Military radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. Description QPD1004S2 2 Piece Sample Bag QPD1004SQ 25 Piece Sample Bag QPD1004SR 100 Piece 7 Reel QPD1004EVB1 30 1000 MHz Evaluation Board - 1 of 18 - Datasheet Rev. F, December 2021 www.qorvo.com Subject to change without notice All rights reserved QPD1004 25W, 50V, 30 1400 MHz, GaN RF Input-Matched Transistor 1, 2 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage,BVDG 145 V Gate Voltage Range, V -7 to +2 V G Drain Current, ID 3.6 A 1 Gate Current Range, I 7.2 mA G Power Dissipation, CW, P 27.6 W DISS RF Input Power at 1 GHz, CW, 50, T = 25C +29.7 dBm Mounting Temperature (30Seconds) 320 C Storage Temperature 65 to +150 C Notes: 1. At Channel temperature of 200C. 2. Operation of this device outside the parameter ranges given above may cause permanent damage. 1, 2, 3 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temp. Range 40 +25 +85 C Drain Voltage Range, VD +50 +55 V Drain Bias Current, IDQ 50 mA Drain Current, I 700 mA D 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, CW (P ) 25.0 W D Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Back plane of package at 85 C 3. To be adjusted to desired IDQ - 2 of 18 - Datasheet Rev. F, December 2021 www.qorvo.com Subject to change without notice All rights reserved