QPD1009 15W, 50V, DC 4 GHz, GaN RF Transistor General Description Qorvos QPD1009 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 50V supply rail. The device is an industry standard 3x3 mm plastic overmold package and is ideally suited to military and civilian radar, land mobile and military radio communications, wireless infrastructure communications, avionics, and test instrumentation. The device can support pulsed, CW and linear operations. 3 x3x0.100mm Lead-free and ROHS compliant. Product Features Evaluation boards are available upon request. Frequency: DC to 4 GHz Output Power (P3dB): 17 W at 2 GHz Linear Gain: 24 dB at 2 GHz Typical PAE3dB: 72% at 2 GHz Operating Voltage: 50 V Low thermal resistance package Functional Block Diagram CW and Pulse capable 3 x 3 mm package N/C N/C N/C N/C 16 15 14 13 Applications N/C 1 12 N/C Military radar Civilian radar V , RF IN 2 G 11 V , RF OUT D Land mobile and military radio communications Test instrumentation V , RF IN 3 G 10 V , RF OUT D Wideband or narrowband amplifiers Jammers N/C 4 9 N/C 5 6 7 8 N/C N/C N/C N/C Ordering info Part No. Description QPD1009 DC4GHz RF Transistor 1132871 0.96 1.215 GHz EVB QPD1009EVB02 1.1 1.7 GHz EVB Rev. F - 1 of 28 - Disclaimer: Subject to change without notice 2019 Qorvo www.qorvo.com QPD1009 15W, 50V, DC 4 GHz, GaN RF Transistor 1 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, V -7 to +2 V G Drain Current, IDSS 1600 mA Gate Current Range, IG See page 4. mA Power Dissipation, CW, P 16 W DISS RF Input Power at 2 GHz, CW, 50, T = 25C +27 dBm Mounting Temperature (30Seconds) 320 C Storage Temperature 40 to +150 C Notes: 1 Operation of this device outside the parameter ranges given above may cause permanent damage. 1 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temp. Range 40 +25 +85 C Drain Voltage Range, V +12 +50 +60 V D Drain Bias Current, IDQ 26 mA Drain Current, ID 700 mA Gate Voltage, V 2.8 V G 2 Power Dissipation, CW (PD) 14.4 W 2, 3 Power Dissipation, Pulsed (P ) 17.5 W D Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package at 85 C 3. Pulse Width = 128 uS, Duty Cycle = 10% Rev. F - 2 of 28 - Disclaimer: Subject to change without notice 2019 Qorvo www.qorvo.com