QPD1011 30 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1011 is a 7W (P ), 50-input matched 3dB discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant. 5 x 6 x 0.85 mm Package Evaluation boards are available upon request. Key Features Frequency: 30 to 1200 MHz 1 Output Power (P ) : 8.7 W 3dB Functional Block Diagram 1 Linear Gain : 21 dB 1 Typical PAE3dB : 60 % Operating Voltage: 50 V CW and Pulse capable 1 8 Note 1: 1 GHz Load Pull 2 7 Input Matching Applications NW 6 3 Military radar Civilian radar 5 4 Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. Description QPD1011EVB01 30 1000 MHz EVB QPD1011S2 Pack of 2 QPD1011 QPD1011SQ Pack of 25 QPD1011 QPD1011SR Pack of 100 QPD1011 Datasheet Rev. C, January 15, 2019 Subject to change without notice - 1 of 24 - www.qorvo.com QPD1011 30 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +145 V Drain Voltage Range, VD +32 +50 +55 V Gate Voltage Range, V -7 to +2 V G Drain Bias Current, IDQ 20 mA Drain Current, IDMAX 1.46 A 4 Drain Current, I 300 mA D Gate Current Range, IG See page 17. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, P 14.7 W DISS 2,4 Power Dissipation (P ) 13 W D RF Input Power, Pulsed, 1.3 +27 dBm 2 2 Power Dissipation (PD), CW 10 W GHz, T = 25C Notes: Mounting Temperature 320 C 1. Electrical performance is measured under conditions noted (30Seconds) in the electrical specifications table. Specifications are not Storage Temperature 65 to +150 C guaranteed over all recommended operating conditions. 2. Package base at 85 C Notes: 3. To be adjusted to desired IDQ 1. Operation of this device outside the parameter ranges 4. Pulsed, 100 uS PW, 10% DC given above may cause permanent damage. 2. Pulsed, 100 uS PW, 10% DC 1, 2 Measured Load Pull Performance Power Tuned Typical Values Parameter Units Frequency, F 0.6 0.8 1.0 1.2 GHz Drain Voltage, VD 50 50 50 50 V Drain Bias Current, IDQ 20 20 20 20 mA Output Power at 3dB 39.7 39.4 39.4 39.1 dBm compression, P3dB Power Added Efficiency at 3dB 59.4 58.7 49.3 49.1 % compression, PAE3dB Gain at 3dB compression, G 15.7 18 18.3 16.6 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 10% Duty Cycle 2. Characteristic Impedance Zo = 33.4 . 1, 2 Measured Load Pull Performance Efficiency Tuned Parameter Typical Values Units Frequency, F 0.6 0.8 1.0 1.2 GHz Drain Voltage, V 50 50 50 50 V D Drain Bias Current, I 20 20 20 20 mA DQ Output Power at 3dB 37.7 38.4 37.3 37.4 dBm compression, P3dB Power Added Efficiency at 3dB 71.6 64.1 60.1 55.4 % compression, PAE3dB Gain at 3dB compression, G 17.9 19.2 19.5 19.1 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 10% Duty Cycle 2. Characteristic Impedance Zo = 33.4 . Datasheet Rev. C, January 15, 2019 Subject to change without notice - 2 of 24 - www.qorvo.com