QPD1013 150W, 65V, DC 2.7 GHz, GaN RF Transistor General Description The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an over- molded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz. The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package. 6 Pin DFN (7.2 x6.6x0.9mm) Lead-free and ROHS compliant Product Features Frequency: DC to 2.7 GHz Evaluation boards are available upon request. 1 Output Power (P ): 178 W 3dB 1 Linear Gain: 21.8 dB 1 Typical PAE3dB: 64.8 % Operating Voltage: 65 V Low thermal resistance package Functional Block Diagram CW and Pulse capable 7.2 x 6.6 mm package Note 1: 1.8 GHz (Loadpull) Applications Military radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Ordering info Part No. ECCN Description QPD1013S2 EAR99 2 Piece Sample Bag QPD1013SQ 25 Piece Sample Bag EAR99 QPD1013SR EAR99 100 Piece 7 Reel QPD1013EVB01 EAR99 1.2 1.9 GHz EVB Rev. A - 1 of 25 - Disclaimer: Subject to change without notice 2017 Qorvo www.qorvo.com QPD1013 150W, 65V, DC 2.7 GHz, GaN RF Transistor 2 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage,BVDG 225 V Gate Voltage Range, VG -8 to +2 V Drain Current, I 9 A D 1 Gate Current Range, IG 19.2 mA Power Dissipation, CW, P 74 W DISS RF Input Power at 1.6 GHz, CW, 50, T = 25C +39 dBm Channel Temperature, TCH 275 C Mounting Temperature (30Seconds) 320 C Storage Temperature 65 to +150 C Notes: 1. At Channel temperature of 200C. 2. Operation of this device outside the parameter ranges given above may cause permanent damage. 1 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temp. Range 40 +25 +85 C Drain Voltage Range, VD +65 +70 V Drain Bias Current, I 240 mA DQ Drain Current, ID 1.7 A 4 Gate Voltage, V 2.8 V G Channel Temperature (T ) 250 C CH 2 Power Dissipation, CW (PD) 67.0 W 2, 3 Power Dissipation, Pulsed (P ) 120.0 W D Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Back plane of package at 85 C 3. Pulse Width = 100 us, Duty Cycle = 10% 4. To be adjusted to desired I DQ Rev. A - 2 of 25 - Disclaimer: Subject to change without notice 2017 Qorvo www.qorvo.com