QPD1020 2.7 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1020 is a 30 W (P ), 50-input matched 3dB discrete GaN on SiC HEMT which operates from 2.7 to 3.5 GHz and 50 V supply. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. Lead-free and ROHS compliant. Evaluation boards are available upon request. 6 x 5 x 1.09 mm DFN Key Features Frequency: 2.7 to 3.5 GHz 1 Output Power (P ) : 31 W 3dB Functional Block Diagram 1 Linear Gain : 18.4 dB 1 Typical DEFF3dB : 65 % Operating Voltage: 50 V CW and Pulse capable 1 8 Note 1: 3.1 GHz Load Pull 7 2 Input Matching NW 6 3 Applications 5 4 Military radar Civilian radar Test instrumentation Ordering info Part No. Description QPD1020S2 Sample of 2 QPD1020 QPD1020SQ Sample of 25 QPD1020 QPD1020SR Sample of 100 QPD1020 QPD1020EVB01 2.7 3.1 GHz EVB Datasheet Rev. C, Nov. 27, 2018 Subject to change without notice - 1 of 21 - www.qorvo.com QPD1020 2.7 3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor 1 1 Absolute Maximum Ratings Recommended Operating Conditions Parameter Min Typ Max Units Parameter Rating Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG +145 V Drain Voltage Range, VD +32 +50 +55 V Gate Voltage Range, V -7 to +2 V G Drain Bias Current, IDQ 52.5 mA Drain Current, IDMAX 4.1 A 4 Drain Current, I 100 mA D Gate Current Range, IG See page 15. mA 3 Gate Voltage, VG 2.8 V 2 Power Dissipation, P 30 W DISS Power Dissipation (P ), D RF Input Power, Pulse, 2.9 27 W 2,4 +33 dBm Pulsed 2 GHz, T = 25C 2 Power Dissipation (P ), CW 18.5 W D Mounting Temperature 320 C Notes: (30Seconds) 1. Electrical performance is measured under conditions noted Storage Temperature 65 to +150 C in the electrical specifications table. Specifications are not Notes: guaranteed over all recommended operating conditions. 2. Package base at 85 C 1. Operation of this device outside the parameter ranges 3. To be adjusted to desired I given above may cause permanent damage. DQ 4. 100uS PW, 20% DC 2. Pulsed 100uS PW, 20% DC 1 Measured Load Pull Performance Power Tuned Typical Values Parameter Units Frequency, F 2.7 3.1 3.5 GHz Drain Voltage, VD 50 50 50 V Drain Bias Current, IDQ 52.5 52.5 52.5 mA Output Power at 3dB 45.2 44.9 45 dBm compression, P3dB Drain Efficiency at 3dB 57 55.3 58.2 % compression, DEFF3dB Gain at 3dB compression, G 14 15.4 15.4 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle 2. Characteristic Impedance, Zo = 33.4 . 1 Measured Load Pull Performance Efficiency Tuned Parameter Typical Values Units Frequency, F 2.7 3.1 3.5 GHz Drain Voltage, V 50 50 50 V D Drain Bias Current, I 52.5 52.5 52.5 mA DQ Output Power at 3dB 43.6 43.6 43.9 dBm compression, P3dB Drain Efficiency at 3dB 68 65.1 66.5 % compression, DEFF3dB Gain at 3dB compression, G 16.5 17.5 16.3 dB 3dB Notes: 1. Pulsed, 100 uS Pulse Width, 20% Duty Cycle 2. Characteristic Impedance, Zo = 33.4 . Datasheet Rev. C, Nov. 27, 2018 Subject to change without notice - 2 of 21 - www.qorvo.com