QPD2194PCB4B01 Qorvo

QPD2194 300W, 48V, 1.8-2.2 GHz GaN RF Power Transistor Doherty Product Description The QPD2194 is a discrete GaN on SiC HEMT which operates from 1.8-2.2 GHz. The device is a single stage pre-matched power amplifier transistor. The QPD2194 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell 2 Lead NI400 Package high efficiency systems. QPD2194 can deliver PSAT of 371 W at +48 V operation. Product Features Lead-free and ROHS compliant. Operating Frequency Range: 1.8-2.2 GHz Operating Drain Voltage: +48 V Functional Block Diagram Maximum Output Power (PSAT): 371 W Maximum Drain Efficiency: 78.8% Efficiency-Tuned P3dB Gain: 18.0 dB 2-lead, earless, ceramic flange NI400 package Applications W-CDMA / LTE Macrocell Base Station, B3-B1 Active Antenna Ordering Information Part No. ECCN Description QPD2194S2 EAR99 Box (2 Samples Each) QPD2194SQ EAR99 Tray (25 Samples) QPD2194SR EAR99 Reel (100 Samples) QPD2194PCB4B01 EAR99 1805-2170 MHz Eval. Board - 1 of 13 - Data Sheet Rev. B Subject to change without notice. www.qorvo.com QPD2194 300W, 48V, 1.8-2.2 GHz GaN RF Power Transistor Doherty Recommended Operating Absolute Maximum Ratings Conditions Parameter Value/Range Parameter Min Typ Max Units Gate Current (IG) 48 to 48 mA Gate Voltage(VG) 2.7 V Drain Voltage (VD) +55V Drain Voltage(VD) 48 V Peak RF Input Power 44dBm Quiescent Current(I ) 600 mA DQ VSWR Mismatch, P1dB Pulse (10% Electrical performance is measured under conditions noted in 10:1 the electrical specifications table. Specifications are not duty cycle, 100 width), T = 25C guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. RF Characterization Parameter Conditions Min Typ Max Units Frequency Range 1805 2170 MHz Quiescent Current 600 mA Linear Gain 19.1 dB P3dB 55.0 dBm Drain Efficiency P3dB 60.0 % Test conditions unless otherwise noted: V = +48V, I = 600mA, T = 25C, Pulsed CW (10% duty cycle, 100 s width) on Class AB D DQ single-ended EVB at 1880 MHz Thermal and Reliability Information Parameter Test Conditions Value Units T = 85C, T = 131C, Thermal Resistance, Peak IR Surface CASE CH 0.77 C/W Temperature at Average Power ( ) JC CW: P = 60W, P = 90W DISS OUT Notes: 1. Thermal resistance measured to package backside. 2. Based on expected carrier amplifier efficiency of Doherty. 3. P assumes 20% peaking amplifier contribution of total average Doherty rated power. OUT 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates. - 2 of 13 - Data Sheet Rev. B Subject to change without notice. www.qorvo.com