QPF4001 26 30GHz 1W GaN Front End Module Product Description The QPF4001 is a multi-function Gallium Nitride MMIC front - end module targeted for 28 GHz phased array 5G base stations and terminals. Fabricated on Qorvos 0.15um GaN on SiC process, the device combines a low noise high linearity LNA, a low insertion-loss high - isolation TR switch, and a high - gain high - efficiency multi-stage PA. The QPF4001 operates from 26 GHz to 30 GHz. The receive path (LNA + TR SW) is designed to provide 17 dB of gain and a typical noise figure of 3.5dB. The transmit path (PA + SW) provides 27 dB of small signal gain with high linearity of 35 dBc ACPR and low EVM of 3% at 23 dBm average output power, while supporting peak power of 1 - Watt. The compact 5 x 4 mm air-cavity laminate surface mount package with embedded copper heat slug employs a low thermal resistance die attached process, this makes QPF4001 ideal for phased array applications with tight lattice spacing and extreme temperature requirements. Functional Block Diagram Product Features 1 Frequency Range: 2630GHz RX Noise Figure: 3.5 dB RX Small Signal Gain: 17 dB RX Saturated Power: 17 dBm RX TOI: 21 dBm - 4 dBm Pin / tone TX Small Signal Gain: 27 dB TX Saturated Power (CW): 31 dBm TX TOI: 39 dBm -6 dBm Pin / tone TX ACPR: 35dBc 23 dBm average Pout 2 TX Linearity: 3 % EVM 23 dBm average Pout 2 TX PAE: 8 % 23 dBm average Pout Package Dimensions: 5.0 x 4.0 x 1.8 mm 1. Performance is typical at room temperature 2. OFDM, 400 MHz modulation bandwidth, 256 QAM Part No. Description Applications QPF4001S2 Sample Bag, Qty 2 5G Wireless Base Stations and Terminals QPF4001SR Tape and Reel, Qty 100 Point to Point Communications QPF4001EVBV1 QPF4001 Evaluation Board Data Sheet Rev. C, May 2020 Subject to change without notice - 1 of 21 - www.qorvo.com QPF4001 26 30GHz 1W GaN Front End Module Normal Operating Conditions Parameter Value 1, 4 Drain Voltage (TXVD12, TXVD3, RXVD) 20 V (RXVD should be on during RX - and TX - operation) Drain Current (TXIDQ12 / TXIDQ3) 68 mA / 20 mA 3 Drain Current (RXIDQ) 15 mA 2 Gate Voltage (TXVG12 / TXVG3) 2 V / -2.5 V 2 Gate Voltage (RXVG) - 2.2 V 3, 4 Control Voltage (SW) for TX on, RX off SW = 0 V (RXVD = 20 V) 3, 4 Control Voltage (SW) for TX off, RX on SW = 20 V (should be the same as RXVD if RXVD is not 20 V) Operating Temperature Range 40 to 95C 1 Electrical specifications are measured at specified test conditions, no guarantee over all recommended operating conditions. 2 Gate voltages shown are typical, can be adjusted to set required drain current. 3 When in TX mode, the drain of receive channel is turned off by an internal switch. 4 The RXVD should be on during RX- and TX- operation. SW high - level should use the same voltage as RXVD. Electrical Specifications RX Test conditions, unless otherwise noted: VD = 20 V, IDQ = 15 mA, SW = 20 V, RXVD = 20 V Data de-embedded to device reference planes, 25 C Parameter Min Typical Max Units Frequency 26 30 GHz Small Signal Gain 17 dB Noise Figure 3.5 dB Saturated Output Power 17 dBm Input Return Loss 11 dB Output Return Loss 11 dB Output TOI, -4 dBm Pin / tone, 10 MHz tone spacing 21 dBm Gain Temperature Coefficient 0.035 dB/C Electrical Specifications TX Test conditions unless otherwise noted: VD = 20 V, TXIDQ12 / TXIDQ3 = 68 mA / 20 mA, SW = 0 V, RXVD = 20 V Data de-embedded to device reference planes, 25 C Parameter Min Typical Max Units Frequency 26 30 GHz Small Signal Gain 27 dB Saturated Output Power, CW 31 dBm Input Return Loss 10 dB Output Return Loss 5 dB Output TOI, -6 dBm Pin / tone, 10 MHz tone spacing 39 dBm ACPR (23 dBm average power, OFDM, 400 MHz, 256 QAM) -35 dBc EVM (23 dBm average power, OFDM, 400 MHz, 256 QAM) 3 % PAE (23 dBm average power, OFDM, 400 MHz, 256 QAM) 8 % Gain Temperature Coefficient 0.064 dB/C Data Sheet Rev. C, May 2020 Subject to change without notice - 2 of 21 - www.qorvo.com