X-On Electronics has gained recognition as a prominent supplier of QPM1002SR RF Front End across the USA, India, Europe, Australia, and various other global locations. QPM1002SR RF Front End are a product manufactured by Qorvo. We provide cost-effective solutions for RF Front End, ensuring timely deliveries around the world.

QPM1002SR Qorvo

QPM1002SR electronic component of Qorvo
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Part No.QPM1002SR
Manufacturer: Qorvo
Category: RF Front End
Description: RF Front End 8.5-10.5GHz GaN TransmitReceive Module
Datasheet: QPM1002SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
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1 : USD 145.184
25 : USD 127.2375
100 : USD 122.35
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We are delighted to provide the QPM1002SR from our RF Front End category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPM1002SR and other electronic components in the RF Front End category and beyond.

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QPM1002 8.5 10.5GHz GaN T/R Module Product Description The QPM1002 is a Gallium Nitride MMIC front-end module (FEM) designed for X-Band radar applications within the 8.5 10.5 GHz range. The MMIC combines a T/R switch, low-noise amplifier, and a power amplifier. The receive path offers 24.5 dB gain with low noise figure of 2.2 dB. The transmit path offers a small signal gain of 33 dB, it can deliver 3 W of saturated power with a PAE of 32%, with a 25 dB of large signal gain. The FEM is robust up to 2 W of input power into the ANT port eliminating the need for a limiter. The QPM1002 is fabricated on Qorvo s QGaN25 0.25um GaN-on-SiC process. The 5 x 5 mm QFN surface mount package with over-mold encapsulant, coupled with high thermal conductivity die-attach process, allows the QPM1002 to perform well in a high temperature environment. Its compact size supports tight lattice spacing requirements needed for X-Band phased array Functional Block Diagram radar applications. Product Features Frequency Range: 8.510.5GHz RX Noise Figure: 2.2 dB RX Small Signal Gain: 24.5 dB RX Saturated Power: 16 dBm RX Output TOI: 22dBm TX Small Signal Gain: 33 dB TX Large Signal Gain: 25 dB TX Saturated Power: 34.5 dBm, Pulsed TX PAE: 32% 34.5 dBm Pout, Pulsed TX Output TOI 6 dBm Pin / tone: 38.5 dBm TX Harmonics Suppression: 35 dBc Package Dimensions: 5 x 5 x 0.85 mm Performance is typical at room temperature. Please reference electrical specification table and data plots for more details. Ordering Information Part No. Description Applications QPM1002 QPM1002 Shipping Tray, Qty 250 Electronics Warfare (EW) QPM1002SR QPM1002 Tape and Reel, Qty 100 Commercial and Military Radar QPM1002TR7 QPM1002 Tape and Reel, Qty 750 Communications QPM1002EVB1 QPM1002 Evaluation Board, Qty 1 Data Sheet Rev. H, Sept. 2021 Subject to change without notice - 1 of 23 - www.qorvo.com QPM1002 8.5 10.5GHz GaN T/R Module Normal Operating Conditions Parameter Value 1, 3 RX Drain Voltage (RXVD) 10 V RX Drain Quiescent Current (RXIDQ) 20 mA 2 RX Gate Control (RXVG) -2.5 V TX Drain Voltage (TXVD) 25 V TX Drain Quiescent Current (TXIDQ) 110 mA 2 TX Gate Voltage (TXVG) -2.5 V Control Voltage (TXSW / RXSW) Transmit: -28V / 0 V Receive: 0V / -28V Operating Temperature Range 40 to 95C 1. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 2. Gate voltage shown are typical, can be adjusted to set required drain current. 3. Drain of LNA is switched off by internal switch when in transmit mode. In receive mode, the PA should be biased off. Absolute Maximum Ratings Parameter Value Drain Voltage (TXVD and RXVD) 32 V Drain Current (TXID) 600 mA Drain Current (RXID) 60 mA Gate Voltage (RXVG, TXVG) 0 to 5 V Gate Current (RXIG) 10 mA Gate Current (TXIG) 20 mA Switch Control Voltage (TXSW, RXSW) 0 to -50 V Switch Control Current 20 mA RF Input Power (All RF ports, 85 C) 33 dBm Channel Temperature, T 225 C CH Mounting Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev. H, Sept. 2021 Subject to change without notice - 2 of 23 - www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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