QPM2637 9 10.5GHz GaN T/R Module Product Description The QPM2637 is a Gallium Nitride MMIC front-end module (FEM) designed for X-Band radar applications within the 9-10.5 GHz range. The MMIC combines a T/R switch, low-noise amplifier, and a power amplifier. The receive path has dual-outputs which offer 21dB gain and 2.7dB noise figure. The transmit path delivers 4W of saturated power with 23dB large signal gain. The FEM is a high robustness device with up to 4W of input power into the ANT port eliminating the need for a limiter. The QPM2637 is fabricated on Qorvo s QGaN25 0.25um GaN-on-SiC process. The air-cavity EHS (embedded copper heat slug) surface mount package, coupled with a low thermal resistance die-attach process, allows the QPM2637 to perform well at extreme case temperatures. Its compact size supports tight lattice spacing requirements needed for X-Band phased array radar Functional Block Diagram applications. Product Features Frequency Range: 910.5GHz RX Noise Figure: 2.7 dB RX Small Signal Gain: 21 dB RX OTOI : 21 dBm TX Large Signal Gain: 23 dB TX Saturated Power: 36 dBm, Pulsed TX PAE: 38% 36 dBm Pout, Pulsed Package Dimensions: 6 x 5 x 1.8 mm Switching Time: < 35 nS Performance is typical at room temperature. Please reference electrical specification table and data plots for more details. Applications Ordering Information Electronics Warfare (EW) Part No. Description Commercial and Military Radar QPM2637 QPM2637, Shipping Tray, Qty 10 Communications QPM2637TR7 QPM2637, Tape and Reel, Qty 250 QPM2637EVB QPM2637 Evaluation Board, Qty 1 Data Sheet Rev G, May 2021 Subject to change without notice - 1 of 18 - www.qorvo.com QPM2637 9 10.5GHz GaN T/R Module Normal Operating Conditions Parameter Value Units RX Drain Voltage (RXVD) 10 V RX Drain Quiescent Current (RXIDQ) 30 mA RX Gate Control (RXVG) -2.5 V TX Drain Voltage (TXVD) 28 V TX Drain Quiescent Current (TXIDQ) 50 mA TX Gate Voltage (TXVG) -2.5 V TX Gate Current (TXIDQ, normal operation) 25 mA Control Voltage (TXSW / RXSW) 0 or -28 V Operating Temperature Range 55 to 100 C Gate voltage shown are typical, can be adjusted to set required drain current. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Min Value Max Value Units Drain Voltage (TXVD and RXVD) - 32 V - Drain Current (TXID) 600 mA - Drain Current (RXID) 60 mA -5 Gate Voltage (RXVG, TXVG) 0 V - Gate Current (RXIG) 20 mA Gate Current (TXIG) - 100 mA Switch Control Voltage (TXSW, RXSW) -50 0 V - Switch Control Current 20 mA - RF Input Power (All RF ports, 85 C) 36 dBm - Channel Temperature, TCH 225 C Mounting Temperature (30 seconds) - 260 C Storage Temperature -55 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Data Sheet Rev G, May 2021 Subject to change without notice - 2 of 18 - www.qorvo.com