X-On Electronics has gained recognition as a prominent supplier of QPM2637 RF Front End across the USA, India, Europe, Australia, and various other global locations. QPM2637 RF Front End are a product manufactured by Qorvo. We provide cost-effective solutions for RF Front End, ensuring timely deliveries around the world.

QPM2637 Qorvo

QPM2637 electronic component of Qorvo
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Part No.QPM2637
Manufacturer: Qorvo
Category: RF Front End
Description: RF Front End X-band GaN TxRX MMIC in ECHL package
Datasheet: QPM2637 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the QPM2637 from our RF Front End category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPM2637 and other electronic components in the RF Front End category and beyond.

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QPM2637 9 10.5GHz GaN T/R Module Product Description The QPM2637 is a Gallium Nitride MMIC front-end module (FEM) designed for X-Band radar applications within the 9-10.5 GHz range. The MMIC combines a T/R switch, low-noise amplifier, and a power amplifier. The receive path has dual-outputs which offer 21dB gain and 2.7dB noise figure. The transmit path delivers 4W of saturated power with 23dB large signal gain. The FEM is a high robustness device with up to 4W of input power into the ANT port eliminating the need for a limiter. The QPM2637 is fabricated on Qorvo s QGaN25 0.25um GaN-on-SiC process. The air-cavity EHS (embedded copper heat slug) surface mount package, coupled with a low thermal resistance die-attach process, allows the QPM2637 to perform well at extreme case temperatures. Its compact size supports tight lattice spacing requirements needed for X-Band phased array radar Functional Block Diagram applications. Product Features Frequency Range: 910.5GHz RX Noise Figure: 2.7 dB RX Small Signal Gain: 21 dB RX OTOI : 21 dBm TX Large Signal Gain: 23 dB TX Saturated Power: 36 dBm, Pulsed TX PAE: 38% 36 dBm Pout, Pulsed Package Dimensions: 6 x 5 x 1.8 mm Switching Time: < 35 nS Performance is typical at room temperature. Please reference electrical specification table and data plots for more details. Applications Ordering Information Electronics Warfare (EW) Part No. Description Commercial and Military Radar QPM2637 QPM2637, Shipping Tray, Qty 10 Communications QPM2637TR7 QPM2637, Tape and Reel, Qty 250 QPM2637EVB QPM2637 Evaluation Board, Qty 1 Data Sheet Rev G, May 2021 Subject to change without notice - 1 of 18 - www.qorvo.com QPM2637 9 10.5GHz GaN T/R Module Normal Operating Conditions Parameter Value Units RX Drain Voltage (RXVD) 10 V RX Drain Quiescent Current (RXIDQ) 30 mA RX Gate Control (RXVG) -2.5 V TX Drain Voltage (TXVD) 28 V TX Drain Quiescent Current (TXIDQ) 50 mA TX Gate Voltage (TXVG) -2.5 V TX Gate Current (TXIDQ, normal operation) 25 mA Control Voltage (TXSW / RXSW) 0 or -28 V Operating Temperature Range 55 to 100 C Gate voltage shown are typical, can be adjusted to set required drain current. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Min Value Max Value Units Drain Voltage (TXVD and RXVD) - 32 V - Drain Current (TXID) 600 mA - Drain Current (RXID) 60 mA -5 Gate Voltage (RXVG, TXVG) 0 V - Gate Current (RXIG) 20 mA Gate Current (TXIG) - 100 mA Switch Control Voltage (TXSW, RXSW) -50 0 V - Switch Control Current 20 mA - RF Input Power (All RF ports, 85 C) 36 dBm - Channel Temperature, TCH 225 C Mounting Temperature (30 seconds) - 260 C Storage Temperature -55 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Data Sheet Rev G, May 2021 Subject to change without notice - 2 of 18 - www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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