QPF4006 37 40.5GHz GaN Front End Module Product Description The QPF4006 is a multi-function Gallium Nitride MMIC front-end module targeted for 39 GHz phased array 5G base stations and terminals. The device combines a low noise high linearity LNA, a low insertion-loss high-isolation TR switch, and a high-gain high-efficiency multi-stage PA. The QPF4006 operates from 37 GHz to 40.5 GHz range. The receive path (LNA+TR SW) is designed to provide 18dB of gain and a noise figure less than 4.5 dB. The transmit path (PA+SW) provides 23 dB of small signal gain and a saturated output power of 2 W. The compact 4.5 mm x 4.0 mm surface mount package configuration is designed to meet the tight lattice spacing requirements for phased array applications. The QPF4006 is fabricated on Qorvos 0.15um GaN on SiC process. It is housed in an air-cavity laminate package with an embedded copper heat slug. The copper slug, coupled with a low thermal resistance die-attach process, allows the QPF4006 to operate at the extreme case Functional Block Diagram temperatures needed in phased array applications. Product Features Frequency Range: 3740.5GHz RX Noise Figure: 4.2 dB RX Small Signal Gain: 18 dB RX Saturated Power: 17 dBm RX TOI : 20 dBm - 5 dBm Pin / tone TX Small Signal Gain: 23 dB TX Saturated Power: 33 dBm TX TOI: 42 dBm 24 dBm Pout / tone 2 TX ACPR: 32dBc 24dBm average Pout 2 TX Linearity: 4% EVM 24 dBm average Pout TX PAE: 7% 24 dBm average Pout. Package Dimensions: 4.5 x 4.0 x 1.8 mm 1. Performance is typical at room temperature. 2. OFDM, 400 MHz modulation bandwidth, 64QAM. Applications Part No. Description 5G Wireless Base stations and terminals QPF4006TR7 Tape and Reel, 7 , Qty 250 Point to Point Communications QPF4006EVB03 QPF4006 Evaluation Board, Qty 1 Data Sheet Rev. M, Dec. 2021 Subject to change without notice - 1 of 23 - www.qorvo.com QPF4006 37 40.5GHz GaN Front End Module Absolute Maximum Ratings Parameter Value Drain Voltage (TXVD, RXVD) 28 V Drain Current (TXID3+TXID12) 800 mA Drain Current (RXID) 60 mA Gate Voltage (RXVG, TXVG3, TXVG12) 0 to 5 V Gate Current (RXIG, TXIG3, TXIG12) 20 mA Switch Control Voltage (TXSW, RXSW) 0 to 28 V Switch Control Current 20 mA RF Input Power (All RF ports, 85 C) 30 dBm Channel Temperature, T 225 C CH Mounting Temperature (30 seconds) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Normal Operating Conditions Parameter Value Drain Voltage 20 V Drain Current (TXIDQ12 / TXIDQ3) 135 mA / 24 mA * Drain Current (RX, IDQ) 15 mA Gate Voltage (TXVG12/TXVG3) 2 V / -2.4 V Gate Voltage (RXVG) -2 V TXSW = 0 V, RXSW = 20V (RX on, TX off) Control Voltage (TXSW, RXSW) TXSW = 20 V, RXSW = 0V (RX off, TX on) Operating Temperature Range 40 to 95C Gate voltage shown are typical, can be adjusted to set required drain current. Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. * Other current settings: 45 / 60 mA = 105 mA 90 / 120 mA = 210 mA 135 / 180 mA = 315 mA (gate controls combined together). Data Sheet Rev. M, Dec. 2021 Subject to change without notice - 2 of 23 - www.qorvo.com