X-On Electronics has gained recognition as a prominent supplier of QPF4005SR RF Front End across the USA, India, Europe, Australia, and various other global locations. QPF4005SR RF Front End are a product manufactured by Qorvo. We provide cost-effective solutions for RF Front End, ensuring timely deliveries around the world.

QPF4005SR Qorvo

QPF4005SR electronic component of Qorvo
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Part No.QPF4005SR
Manufacturer: Qorvo
Category: RF Front End
Description: RF Front End 39GHz 5G FEM dual channel
Datasheet: QPF4005SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
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1 : USD 399.2353
25 : USD 284.6062
100 : USD 244.823
200 : USD 244.8109
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We are delighted to provide the QPF4005SR from our RF Front End category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPF4005SR and other electronic components in the RF Front End category and beyond.

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QPF4005 37 40.5GHz GaN Dual Channel Front End Module Product Description The QPF4005 is a dual-channel multi-function Gallium Nitride MMIC front-end module targeted for 39GHz phased array 5G base stations and terminals. For each channel a multi-function MMIC die combines a low noise amplifier, a low insertion-loss high-isolation TR switch, and a high-gain high-efficiency multi-stage PA. The QPF4005 operates from 37 GHz to 40.5 GHz range. The receive path (LNA + T/R SW) is designed to provide 15dB of gain and a noise figure less than 4.5dB. The transmit path (PA + T/R SW) provides 18 dB of small signal gain and a saturated output power of 2W each channel. The compact 4.5 mm x 6.0 mm surface mount package configuration is designed to meet the tight lattice spacing requirements and support multi-channel/dual-polarization phased array applications. The QPF4005 is fabricated on Qorvos 0.15um GaN on SiC process. It is housed in an air-cavity laminate package Functional Block Diagram with an embedded copper heat slug. The copper slug, coupled with a low thermal resistance die-attach process, allows the QPF4005 to operate at the extreme case temperatures needed in phased array applications. Product Features 1 Frequency Range: 3740.5GHz RX Noise Figure: 4.2 dB RX Small Signal Gain: 18 dB RX Saturated Power: 17 dBm RX TOI : 20 dBm - 5 dBm Pin / tone TX Small Signal Gain: 23 dB TX Saturated Power: 33 dBm TX TOI: 42 dBm 24 dBm Pout / tone 2 TX ACPR: 32dBc 24dBm average Pout 2 TX Linearity: 4% EVM 24 dBm average Pout TX PAE: 7% 24 dBm average Pout. Package Dimensions: 4.5 x 6.0 x 1.8 mm 1. Performance is typical at room temperature. 2. OFDM, 400 MHz modulation bandwidth, 64QAM. Applications Part No. Description QPF4005SR Tape and Reel, Qty 100 5G Wireless Base stations and terminals QPF4005EVB03 QPF4005 Evaluation Board, Qty 1 Point to Point Communications Data Sheet Rev. J, Dec. 2021 Subject to change without notice - 1 of 22 - www.qorvo.com QPF4005 37 40.5GHz GaN Dual Channel Front End Module Normal Operating Conditions Parameter Value 1, 2, 5 Drain Voltage (TXVD, RXVD) 20 V 4 Drain Current (TXIDQ12 / TXIDQ3) 135 mA / 24 mA Drain Current (RXIDQ) 15 mA 3 Gate Voltage (TXVG12 / TXVG3) 2 V / -2.4 V 3 Gate Voltage (RXVG) -2 V TXSW = 0 V, RXSW = 20V (RX on, TX off) Control Voltage (TXSW, RXSW) TXSW = 20 V, RXSW = 0V (RX off, TX on) Operating Temperature Range 40 to 95C 1 Electrical specifications are measured at specified test conditions, no guarantee over all recommended operating conditions 2 Suffixes for channel ID removed from pin labels, both channels use the same settings 3 Gate voltages shown are typical, can be adjusted to set required drain current 4 Other current settings: 45 / 60 mA = 105 mA 90 / 120 mA = 210 mA 135 / 180 mA = 315 mA (gate controls combined together) 5 When in TX mode, the drain of receive channel is turned off by an internal switch. Electrical Specifications RX Test conditions, unless otherwise noted: VD = 20 V, IDQ = 15 mA. Data de-embedded to device reference planes, 25 C Parameter Min Typical Max Units Frequency 37 40.5 GHz Small Signal Gain 18 dB Noise Figure 4.2 dB Saturated Output Power 17 dBm Input Return Loss 12 dB Output Return Loss 15 dB Output TOI, -5 dBm Pin / tone, 10 MHz tone spacing 20 dBm Gain Temperature Coefficient 0.056 dB/C Electrical Specifications TX Test conditions unless otherwise noted: VD = 20 V, TXIDQ12 / TXIDQ3 = 135mA / 24 mA Data de-embedded to device reference planes, 25 C Parameter Min Typical Max Units Frequency 37 40.5 GHz Small Signal Gain 23 dB Saturated Output Power 33 dBm Input Return Loss 12 dB Output Return Loss 13 dB Output TOI, 24dBm Pout / tone, 10 MHz tone spacing 42 dBm ACPR (24 dBm average power, OFDM, 400MHz, 64QAM) -32 dBc EVM (24 dBm average power, OFDM, 400MHz, 64QAM) 4 % PAE at average output power (24dBm) 7 % Gain Temperature Coefficient 0.112 dB/C Data Sheet Rev. J, Dec. 2021 Subject to change without notice - 2 of 22 - www.qorvo.com

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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