QPD1025 1800 W, 65 V, 0.96 1.215GHz, GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from 0.96 to 1.215 GHz. Input pre- match within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations. RoHS compliant 4-lead NI-1230 Package (Earless) Evaluation boards are available upon request. Key Features Frequency: 0.96 to 1.215 GHz 1 Output Power (P3dB) : 1862 W Functional Block Diagram 1 Linear Gain : 22.5 dB 1 Typical PAE3dB : 77.2% Operating Voltage: 65 V CW and Pulse capable Note 1: 1.0 GHz Load Pull Applications IFF Transponders DME radar Avionics Ordering info Part No. Description 0.96 1.215 GHz Transistor (18 pcs in QPD1025 tray) QPD1025EVB1 1.0 1.1 GHz Evaluation Board QPD1025EVB2 0.96 1.215 GHz Evaluation Board - 1 of 26- Datasheet Rev. F, May 2020 Subject to change without notice www.qorvo.com QPD1025 1800 W, 65 V, 0.96 1.215GHz, GaN RF Input-Matched Transistor 1, 2, 3 1, 2, 3, 4 Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Units Parameter Min Typ Max Units Operating Temp. Range 40 +25 +85 C Breakdown Voltage,BVDG 225 V Drain Voltage Range, VD +65 +70 V Gate Voltage Range, VG -7 to +2 V Drain Bias Current, IDQ 1.5 A Drain Current, IDMAX 142 A 4 Gate Current Range, IG See pg. 12 mA Drain Current, ID 28 A Power Dissipation, Pulsed, 3 Gate Voltage, VG 2.8 V 1209 W 2 PDISS 2,4 3 Power Dissipation (PD) 685 W RF Input Power, Pulsed, PIN 46.2 dBm Mounting Temperature 2 320 C Power Dissipation (PD), CW 496 W (30Seconds) Storage Temperature 65 to +150 C Notes: Notes: 1. Electrical performance is measured under conditions noted 1. Operation of this device outside the parameter ranges in the electrical specifications table. Specifications are not given above may cause permanent damage guaranteed over all recommended operating conditions 2. Pulsed, 1000us PW, 20% DC, Package base at 85 C 2. Package base at 85 C 3. Pulsed, 100us PW, 10% DC, T = 25 C 3. To be adjusted to desired I DQ 4. Pulsed, 1000us PW, 20% DC 1, 2 Measured Load Pull Performance 65V Power Tuned Typical Values Parameter Units Frequency, F 0.915 1.0 1.1 1.2 GHz Output Power at 3dB compression, P3dB 59.7 59.9 59.7 59.8 dBm Power Added Efficiency at 3dB compression, PAE3dB 63.2 62.8 65.7 61.9 % Gain at 3dB compression, G3dB 17.9 17.5 17.3 17.2 dB Notes: 1. Test conditions unless otherwise noted: T = 25 C, V = 65 V, I = 750 mA (half device) A D DQ 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. 1, 2 Measured Load Pull Performance 65V Efficiency Tuned Typical Values Parameter Units Frequency, F 0.915 1.0 1.1 1.2 GHz Output Power at 3dB compression, P3dB 57.5 57.7 58.5 58.3 dBm Power Added Efficiency at 3dB compression, PAE3dB 77.6 77.2 77.0 74.6 % Gain at 3dB compression, G3dB 19.7 19.5 18.7 19.0 dB Notes: 1. Test conditions unless otherwise noted: T = 25 C, V = 65 V, I = 750 mA (half device) A D DQ 2. Pulsed, 100 us Pulse Width, 10% Duty Cycle. - 2 of 26- Datasheet Rev. F, May 2020 Subject to change without notice www.qorvo.com