X-On Electronics has gained recognition as a prominent supplier of IXZ318N50 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. IXZ318N50 RF MOSFET Transistors are a product manufactured by IXYS. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

IXZ318N50 IXYS

IXZ318N50 electronic component of IXYS
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See Product Specifications
Part No.IXZ318N50
Manufacturer: IXYS
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors IXZ318N50 18A 500V N Channel ZMOS Switch MOSFET
Datasheet: IXZ318N50 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 41.0117
5 : USD 39.1822
10 : USD 37.9348
25 : USD 35.4438
100 : USD 34.1586
250 : USD 30.4038
500 : USD 28.7532
1000 : USD 28.7532
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Forward Transconductance - Min
Number Of Channels
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXZ318N50 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXZ318N50 and other electronic components in the RF MOSFET Transistors category and beyond.

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IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 500 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 19 A D25 R Symbol Test Conditions Maximum Ratings 0.34 DS(on) T = 25C to 150C V J 500 V DSS P = 880 W DC T = 25C to 150C R = 1 M J GS V 500 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 19 A D25 T = 25C, pulse width limited by T c JM I 95 A DM T = 25C c I 19 A AR T = 25C c E TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 880 W DC DRAIN T = 25C c GATE P 440 W DHS T = 25C amb P 3.0 W DAMB R 0.17 C/W thJC SG1 SG2 SD1 SD2 R 0.34 C/W thJHS Features Symbol Test Conditions Characteristic Values Isolated Substrate (T = 25C unless otherwise specified) J high isolation voltage (>2500V) min. typ. max. excellent thermal transfer Increased temperature and power V = 0 V, I = 4 ma GS D V 500 V DSS cycling capability V = V , I = 250 V DS GS D 3.5 4.9 6.5 V IXYS advanced Z-MOS process GS(th) Low gate charge and capacitances V = 20 V , V = 0 GS DC DS I 100 nA GSS easier to drive V = 0.8V T = 25C DS DSS J I 50 A DSS faster switching V =0 T =125C GS J 1 mA Low R DS(on) Very low insertion inductance (<2nH) V = 20 V, I = 0.5I GS D D25 R .32 .34 DS(on) No beryllium oxide (BeO) or other Pulse test, t 300S, duty cycle d 2% hazardous materials V = 50 V, I = 0.5I , pulse test DS D D25 g 5.0 5.4 6.0 S fs Advantages T -55 +175 C J Optimized for RF and high speed Easy to mountno insulators needed T 175 C JM High power density T -55 + 175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 3.5 g IXZ318N50 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 1 G C 1950 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 175 pF oss f = 1 MHz C 17 pF rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 4 ns on I = 0.5 I D DM T R = 1 (External) 5 ns d(off) G T 6 ns off Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 19 A S Repetitive pulse width limited by T JM I 114 A SM I = I V =0 V, Pulse test, t 300s, duty cycle F s, GS V 1.5 V SD 2% T 200 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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