X-On Electronics has gained recognition as a prominent supplier of IXZR08N120 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. IXZR08N120 RF MOSFET Transistors are a product manufactured by IXYS. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

IXZR08N120 IXYS

IXZR08N120 electronic component of IXYS
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See Product Specifications
Part No.IXZR08N120
Manufacturer: IXYS
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors 08A 1200V N Channel ZMOS Switch MOSFET ISO PLUS 247
Datasheet: IXZR08N120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 35.8697
5 : USD 34.2758
10 : USD 33.1808
25 : USD 30.4851
100 : USD 28.5757
250 : USD 25.4301
500 : USD 24.0561
1000 : USD 24.0561
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Forward Transconductance - Min
Number Of Channels
Product Type
Qg - Gate Charge
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXZR08N120 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXZR08N120 and other electronic components in the RF MOSFET Transistors category and beyond.

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120 = G D S 120A = G S D 120B = D S G IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 1200 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 8.0 A D25 R Symbol Test Conditions Maximum Ratings 1.5 DS(on) T = 25C to 150C V J 1200 V DSS P = 250 W DC T = 25C to 150C R = 1 M J GS V 1200 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 8 A D25 T = 25C, pulse width limited by T c JM I 40 A DM T = 25C c I 8 A AR T = 25C c E TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 250 W DC T = 25C, Derate 4.4W/C above 25C c P 180 W DHS T = 25C c P 3.0 W DAMB R 0.60 C/W thJC R 0.85 C/W thJHS Features Isolated Substrate high isolation voltage (>2500V) excellent thermal transfer min. typ. max. Increased temperature and power cycling capability V = 0 V, I = 4 ma GS D V 1200 V DSS IXYS advanced Z-MOS process Low gate charge and capacitances V = V , I = 250 V DS GS D 4 4.9 6 V GS(th) easier to drive V = 20 V , V = 0 GS DC DS I 100 nA GSS faster switching V = 0.8V T = 25C DS DSS J Low R I 50 DS(on) A DSS V =0 T =125C GS J Very low insertion inductance (<2nH) 1 mA No beryllium oxide (BeO) or other V = 15 V, I = 0.5I GS D D25 R 1.4 DS(on) hazardous materials Pulse test, t 300S, duty cycle d 2% Advantages V = 20 V, I = 0.5I , pulse test g DS D D25 4 5.5 6.5 S fs TM High Performance RF Z-MOS T -55 +175 C J Optimized for RF and high speed switching at frequencies to 100MHz T 175 C JM Common Source RF Package Easy to mountno insulators needed T -55 + 175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 3.5 g IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 0.3 G C 1900 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 86 pF oss f = 1 MHz C 11 pF rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 5 ns on I = 0.5 I D DM R = 0.2 (External) G T 4 ns d(off) T 6 ns off Q 39 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 11 nC gs I = 0.5 I IG = 3mA D D25 Q 19 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 8 S Repetitive pulse width limited by T JM I 48 A SM I I V =0 V, Pulse test, t 300s, duty cycle F= s, GS V 1.5 V SD 2% T 200 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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