120 = G D S 120A = G S D 120B = D S G IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 1200 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 8.0 A D25 R Symbol Test Conditions Maximum Ratings 1.5 DS(on) T = 25C to 150C V J 1200 V DSS P = 250 W DC T = 25C to 150C R = 1 M J GS V 1200 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 8 A D25 T = 25C, pulse width limited by T c JM I 40 A DM T = 25C c I 8 A AR T = 25C c E TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 250 W DC T = 25C, Derate 4.4W/C above 25C c P 180 W DHS T = 25C c P 3.0 W DAMB R 0.60 C/W thJC R 0.85 C/W thJHS Features Isolated Substrate high isolation voltage (>2500V) excellent thermal transfer min. typ. max. Increased temperature and power cycling capability V = 0 V, I = 4 ma GS D V 1200 V DSS IXYS advanced Z-MOS process Low gate charge and capacitances V = V , I = 250 V DS GS D 4 4.9 6 V GS(th) easier to drive V = 20 V , V = 0 GS DC DS I 100 nA GSS faster switching V = 0.8V T = 25C DS DSS J Low R I 50 DS(on) A DSS V =0 T =125C GS J Very low insertion inductance (<2nH) 1 mA No beryllium oxide (BeO) or other V = 15 V, I = 0.5I GS D D25 R 1.4 DS(on) hazardous materials Pulse test, t 300S, duty cycle d 2% Advantages V = 20 V, I = 0.5I , pulse test g DS D D25 4 5.5 6.5 S fs TM High Performance RF Z-MOS T -55 +175 C J Optimized for RF and high speed switching at frequencies to 100MHz T 175 C JM Common Source RF Package Easy to mountno insulators needed T -55 + 175 C stg 1.6mm(0.063 in) from case for 10 s T 300 C L Weight 3.5 g IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 0.3 G C 1900 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 86 pF oss f = 1 MHz C 11 pF rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 5 ns on I = 0.5 I D DM R = 0.2 (External) G T 4 ns d(off) T 6 ns off Q 39 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 11 nC gs I = 0.5 I IG = 3mA D D25 Q 19 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 8 S Repetitive pulse width limited by T JM I 48 A SM I I V =0 V, Pulse test, t 300s, duty cycle F= s, GS V 1.5 V SD 2% T 200 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002