X-On Electronics has gained recognition as a prominent supplier of IXZR18N50 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. IXZR18N50 RF MOSFET Transistors are a product manufactured by IXYS. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

IXZR18N50 IXYS

IXZR18N50 electronic component of IXYS
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See Product Specifications
Part No.IXZR18N50
Manufacturer: IXYS
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors 18A 500V N Channel ZMOS Switch MOSFET ISO Plus 247
Datasheet: IXZR18N50 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 48.5914
5 : USD 46.4178
10 : USD 44.9449
25 : USD 41.2912
100 : USD 39.598
250 : USD 35.243
500 : USD 33.332
1000 : USD 33.332
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Forward Transconductance - Min
Number Of Channels
Product Type
Qg - Gate Charge
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXZR18N50 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXZR18N50 and other electronic components in the RF MOSFET Transistors category and beyond.

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50 = G D S 50A = G S D 50B = D S G IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 500 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 19 A D25 R 0.37 DS(on) Symbol Test Conditions Maximum Ratings T = 25C to 150C J P = 350 W V 500 V DSS DC T = 25C to 150C R = 1 M V J GS 500 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C I c 19 A D25 T = 25C, pulse width limited by T c JM I 95 A DM T = 25C c I 19 A AR T = 25C E c TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 350 W DC T = 25C, Derate 4.4W/C above 25C c P TBD W DHS T = 25C P c 3.0 W DAMB R TBD C/W thJC R TBD C/W thJHS Features Symbol Test Conditions Characteristic Values Isolated Substrate high isolation voltage (>2500V) (T = 25C unless otherwise specified) min. typ. max. J excellent thermal transfer V = 0 V, I = 4 ma GS D V 500 V DSS Increased temperature and power cycling capability V = V , I = 250 V DS GS D 4.6 V GS(th) IXYS advanced Z-MOS process V = 20 V , V = 0 GS DC DS I 100 nA Low gate charge and capacitances GSS easier to drive V = 0.8V T = 25C I DS DSS J 50 A DSS faster switching V =0 T GS J 1 mA =125C Low R DS(on) Very low insertion inductance (<2nH) V = 20 V, I = 0.5I GS D D25 R 0.37 DS(on) Pulse test, t 300S, duty cycle d 2% No beryllium oxide (BeO) or other hazardous materials V = 50 V, I = 0.5I , pulse g DS D D25 6.7 S fs test Advantages T -55 +175 C Optimized for RF and high speed J Easy to mountno insulators needed T 175 C JM High power density T -55 + 175 C stg 1.6mm(0.063 in) from case for 10 T 300 C L s Weight 3.5 g IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 1 G C 2020 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 172 pF oss f = 1 MHz C 21 pF rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 4 ns on I = 0.5 I D DM R = 1 (External) G T 4 ns d(off) T 5 ns off Q 42 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 14 nC gs I = 0.5 I IG = 3mA D D25 Q 21 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 19 S Repetitive pulse width limited by T I JM 114 A SM I = I V =0 V, Pulse test, t 300s, duty cycle F s, GS V 1.5 V SD 2% T 200 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS Integrated Circuits Division
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