50 = G D S 50A = G S D 50B = D S G IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process TM V = 500 V DSS Optimized for RF Operation Ideal for Class C, D, & E Applications I = 19 A D25 R 0.37 DS(on) Symbol Test Conditions Maximum Ratings T = 25C to 150C J P = 350 W V 500 V DSS DC T = 25C to 150C R = 1 M V J GS 500 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C I c 19 A D25 T = 25C, pulse width limited by T c JM I 95 A DM T = 25C c I 19 A AR T = 25C E c TBD mJ AR I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 350 W DC T = 25C, Derate 4.4W/C above 25C c P TBD W DHS T = 25C P c 3.0 W DAMB R TBD C/W thJC R TBD C/W thJHS Features Symbol Test Conditions Characteristic Values Isolated Substrate high isolation voltage (>2500V) (T = 25C unless otherwise specified) min. typ. max. J excellent thermal transfer V = 0 V, I = 4 ma GS D V 500 V DSS Increased temperature and power cycling capability V = V , I = 250 V DS GS D 4.6 V GS(th) IXYS advanced Z-MOS process V = 20 V , V = 0 GS DC DS I 100 nA Low gate charge and capacitances GSS easier to drive V = 0.8V T = 25C I DS DSS J 50 A DSS faster switching V =0 T GS J 1 mA =125C Low R DS(on) Very low insertion inductance (<2nH) V = 20 V, I = 0.5I GS D D25 R 0.37 DS(on) Pulse test, t 300S, duty cycle d 2% No beryllium oxide (BeO) or other hazardous materials V = 50 V, I = 0.5I , pulse g DS D D25 6.7 S fs test Advantages T -55 +175 C Optimized for RF and high speed J Easy to mountno insulators needed T 175 C JM High power density T -55 + 175 C stg 1.6mm(0.063 in) from case for 10 T 300 C L s Weight 3.5 g IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J min. typ. max. R 1 G C 2020 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 172 pF oss f = 1 MHz C 21 pF rss Back Metal to any Pin C 33 pF stray T 4 ns d(on) V = 15 V, V = 0.8 V GS DS DSS T 4 ns on I = 0.5 I D DM R = 1 (External) G T 4 ns d(off) T 5 ns off Q 42 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 14 nC gs I = 0.5 I IG = 3mA D D25 Q 21 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 19 S Repetitive pulse width limited by T I JM 114 A SM I = I V =0 V, Pulse test, t 300s, duty cycle F s, GS V 1.5 V SD 2% T 200 ns rr CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002