X-On Electronics has gained recognition as a prominent supplier of QPD1015L RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. QPD1015L RF JFET Transistors are a product manufactured by Qorvo. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

QPD1015L Qorvo

QPD1015L electronic component of Qorvo
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Part No.QPD1015L
Manufacturer: Qorvo
Category: RF JFET Transistors
Description: RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
Datasheet: QPD1015L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 413.2452
25 : USD 264.9008
100 : USD 232.246
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Operating Temperature Range
Series
Brand
Development Kit
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QPD1015L from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPD1015L and other electronic components in the RF JFET Transistors category and beyond.

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QPD1015L 65W, 50V, DC 3.7 GHz, GaN RF Transistor General Description The QPD1015L is a 65 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.7 GHz with a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited for military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operation. Lead-free and ROHS compliant Product Features Evaluation boards are available upon request. Frequency: DC to 3.7 GHz 1 Output Power (P ) : 70 W 3dB 1 Linear Gain : 20 dB 1 Typical PAE3dB : 74% Operating Voltage: 50 V Low thermal resistance package Functional Block Diagram CW and Pulse capable Note: 1 2 GHz Applications Military radar Civilian radar Land mobile and military radio communications Test instrumenation Wideband or narrowband amplifiers Jammers Avionics Ordering info Part No. ECCN Description DC3.7GHz 65W RF QPD1015L EAR99 Transistor QPD1015LPCB401 EAR99 0.96 1.215 GHz EVB QPD1015LEVB2 EAR99 3.0 3.5 GHz EVB Rev. C - 1 of 27 - Disclaimer: Subject to change without notice 2016 Qorvo www.qorvo.com QPD1015L 65W, 50V, DC 3.7 GHz, GaN RF Transistor 1 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage, BVD +145 V Gate Voltage Range, VG -7 to +2 V Drain Current, I 10.2 A DMAX Gate Current Range, IG See pg. 7. mA Power Dissipation, CW, P , Base Temperature = 85 C 40 W DISS RF Input Power, CW, 50, T = 25C +37 dBm Channel Temperature, TCH 275 C Mounting Temperature (30Seconds) 320 C Storage Temperature 40 to +150 C Notes: 1 Operation of this device outside the parameter ranges given above may cause permanent damage. 1 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temperature Range 40 +25 +85 C Drain Voltage Range, V +12 +50 +55 V D 3 Drain Current, ID 2.5 A Drain Bias Current, I 65 mA DQ 4 Gate Voltage, VG 2.8 V Channel Temperature, TCH 250 C 2 Power Dissipation, CW, P 36 W D 2, 3 Power Dissipation, Pulsed, PD 64 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at 85 C 3. Drain current at P3dB, Pulse Width = 128 uS, Duty Cycle = 10% 4. To be adjusted for desired I DQ Rev. C - 2 of 27 - Disclaimer: Subject to change without notice 2016 Qorvo www.qorvo.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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