Package Type: 440095 PN: CGH09120F CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Crees CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. Typical Performance Over 800-950 MHz (T = 25C) of Demonstration Amplifier C Parameter 800 MHz 850 MHz 900 MHz 950 MHz Units Gain 43 dBm 19.2 21.0 21.6 21.6 dB ACLR 43 dBm -40.5 -40.5 -39.0 -36.5 dBc Drain Efficiency 43 dBm 31.0 33.7 36.6 39.3 % Note: Measured in the CGH09120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8.81 dB 0.01 % Probability on CCDF. Features UHF - 2.5 GHz Operation 21 dB Gain -38 dBc ACLR at 20 W P AVE 35 % Efficiency at 20 W P AVE High Degree of DPD Correction Can be Applied Subject to change without notice. 1 www.cree.com/RF Rev 2.1 June 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Power Dissipation P 56 Watts DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 30 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 80 in-oz 3 Thermal Resistance, Junction to Case R 1.7 C/W 85C JC 3 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH09120F at P = 56 W DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 1.2 A GS(Q) DC DS D 2 Saturated Drain Current I 23.2 28.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 28.8 mA BR DC GS D 5 RF Characteristics (T = 25C, F = 870 MHz unless otherwise noted) C 0 3,4 Saturated Output Power P 120 W V = 28 V, I = 1.2 A, SAT DD DQ 3 Pulsed Drain Efficiency 75 % V = 28 V, I = 1.2 A, P = P DD DQ OUT SAT 6 Modulated Gain G 20 21.5 dB V = 28 V, I = 1.2 A, P = 43 dBm SS DD DQ OUT 6 WCDMA Linearity ACLR -38 34 dBc V = 28 V, I = 1.2 A, P = 43 dBm DD DQ OUT 6 Modulated Drain Efficiency 31 35 % V = 28 V, I = 1.2 A, P = 43 dBm DD DQ OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 1.2 A, DD DQ P = 20 W CW OUT Dynamic Characteristics Input Capacitance C 35.3 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 9.1 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 1.6 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 40 S, Duty Cycle = 5 %. 4 P is defined as I = 10 mA peak. SAT G 5 Measured in CGH09120F-AMP 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB 0.01 % Probability on CCDF. Cree, Inc. 4600 Silicon Drive Copyright 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH09120F Rev 2.1