X-On Electronics has gained recognition as a prominent supplier of CGH09120F RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. CGH09120F RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

CGH09120F Wolfspeed

CGH09120F electronic component of Wolfspeed
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Part No.CGH09120F
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
Datasheet: CGH09120F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 353.705 ea
Line Total: USD 353.7 
Availability - 14
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 353.705
60 : USD 315.975
100 : USD 284.933
260 : USD 281.127
500 : USD 281.017
1000 : USD 280.863
2500 : USD 280.72

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Application
Configuration
Operating Temperature Range
Brand
Nf - Noise Figure
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CGH09120F from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CGH09120F and other electronic components in the RF JFET Transistors category and beyond.

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Package Type: 440095 PN: CGH09120F CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Crees CGH09120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. Typical Performance Over 800-950 MHz (T = 25C) of Demonstration Amplifier C Parameter 800 MHz 850 MHz 900 MHz 950 MHz Units Gain 43 dBm 19.2 21.0 21.6 21.6 dB ACLR 43 dBm -40.5 -40.5 -39.0 -36.5 dBc Drain Efficiency 43 dBm 31.0 33.7 36.6 39.3 % Note: Measured in the CGH09120F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8.81 dB 0.01 % Probability on CCDF. Features UHF - 2.5 GHz Operation 21 dB Gain -38 dBc ACLR at 20 W P AVE 35 % Efficiency at 20 W P AVE High Degree of DPD Correction Can be Applied Subject to change without notice. 1 www.cree.com/RF Rev 2.1 June 2015Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage V 84 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Power Dissipation P 56 Watts DISS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 30 mA 25C GMAX 1 Maximum Drain Current I 12 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 80 in-oz 3 Thermal Resistance, Junction to Case R 1.7 C/W 85C JC 3 Case Operating Temperature T -40, +150 C C Note: 1 Current limit for long term, reliable operation. 2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH09120F at P = 56 W DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28.8 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 1.2 A GS(Q) DC DS D 2 Saturated Drain Current I 23.2 28.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 120 V V = -8 V, I = 28.8 mA BR DC GS D 5 RF Characteristics (T = 25C, F = 870 MHz unless otherwise noted) C 0 3,4 Saturated Output Power P 120 W V = 28 V, I = 1.2 A, SAT DD DQ 3 Pulsed Drain Efficiency 75 % V = 28 V, I = 1.2 A, P = P DD DQ OUT SAT 6 Modulated Gain G 20 21.5 dB V = 28 V, I = 1.2 A, P = 43 dBm SS DD DQ OUT 6 WCDMA Linearity ACLR -38 34 dBc V = 28 V, I = 1.2 A, P = 43 dBm DD DQ OUT 6 Modulated Drain Efficiency 31 35 % V = 28 V, I = 1.2 A, P = 43 dBm DD DQ OUT No damage at all phase angles, Output Mismatch Stress VSWR 10 : 1 Y V = 28 V, I = 1.2 A, DD DQ P = 20 W CW OUT Dynamic Characteristics Input Capacitance C 35.3 pF V = 28 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 9.1 pF V = 28 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 1.6 pF V = 28 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Pulse Width = 40 S, Duty Cycle = 5 %. 4 P is defined as I = 10 mA peak. SAT G 5 Measured in CGH09120F-AMP 6 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 67 % Clipping, PAR = 8.81 dB 0.01 % Probability on CCDF. Cree, Inc. 4600 Silicon Drive Copyright 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGH09120F Rev 2.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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