Product Information

BFR31,235

BFR31,235 electronic component of NXP

Datasheet
RF JFET Transistors N-Channel Single +/- 25V 5mA

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.7791
10 : USD 0.5735
25 : USD 0.4525
100 : USD 0.3964
250 : USD 0.3472
500 : USD 0.307
1000 : USD 0.2457
2000 : USD 0.2331
5000 : USD 0.2167
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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DISCRETE SEMICONDUCTORS DATA SHEET BFR30 BFR31 N-channel field-effect transistors Product specification 1997 Dec 05 Supersedes data of April 1991NXP Semiconductors Product specification N-channel field-effect transistors BFR30 BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel 3 handbook, halfpage field-effect transistor in a plastic SOT23 package. d g s APPLICATIONS Low level general purpose amplifiers in thick and 12 thin-film circuits. Top view MAM385 PINNING - SOT23 Marking codes: BFR30: M1p. PIN SYMBOL DESCRIPTION BFR31: M2p. (1) 1 d drain Fig.1 Simplified outline and symbol. (1) 2 s source 3g gate Note CAUTION 1. Drain and source are interchangeable. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage 25 V DS V gate-source voltage open drain 25 V GSO P total power dissipation T 40 C 250 mW tot amb I drain current V =0 V =10V DSS GS DS BFR30 4 10 mA BFR31 1 5 mA y common-source transfer admittance I =1 mA V =10V f=1kHz fs D DS BFR30 1 4 mS BFR31 1.5 4.5 mS 1997 Dec 05 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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