BFR520T,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Product specification 2000 Apr 03 Supersedes data of 1999 Nov 02NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR520T FEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package. 3 Low noise figure lfpage High transition frequency PINNING Gold metallization ensures excellent reliability PIN DESCRIPTION 12 SOT416 (SC-75) package. Top view MBK090 1base 2emitter APPLICATIONS 3 collector Marking code: N2. Wideband applications such as satellite TV tuners, cellular phones, Fig.1 SOT416. cordless phones, pagers etc., with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE I DC collector current 70 mA C P total power dissipation up to T =75 C note 1 150 mW tot s h DC current gain I =20mA V =6V T =25 C 60 120 250 FE C CE j f transition frequency I =20mA V = 6 V f = 1 GHz 9 GHz T C CE T =25 C amb G maximum unilateral power I =20mA V = 6 V f = 900 MHz 15 dB UM C CE gain T =25 C amb F noise figure I =5mA V = 6 V f = 900 MHz 1.1 1.6 dB C CE T =25 C amb Note 1. T is the temperature at the soldering point of the collector tab. s LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE V emitter-base voltage open collector 2.5 V EBO I DC collector current 70 mA C P total power dissipation up to T =75 C note 1 150 mW tot s T storage temperature 65 +150 C stg T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector tab. s 2000 Apr 03 2