BFR93A,215 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification 1997 Oct 29 Supersedes data of September 1995NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic lfpage 3 SOT23 package. Low noise figure PNP complement: BFT93. Very low intermodulation distortion. PINNING 12 APPLICATIONS Top view MSB003 PIN DESCRIPTION RF wideband amplifiers and Marking code: R2p. oscillators. 1base 2emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 15 V CBO V collector-emitter voltage open base 12 V CEO I collector current (DC) 35 mA C P total power dissipation T 95 C 300 mW tot s C feedback capacitance I =0; V =5V; f= 1MHz 0.6 pF re C CE f transition frequency I =30mA; V =5V; f= 500MHz 6 GHz T C CE G maximum unilateral power gain I =30mA; V =8V; f= 1GHz; T =25 C13 dB UM C CE amb I =30mA; V =8V; f= 2GHz; T =25 C7 dB C CE amb F noise figure I =5mA; V =8V; f= 1GHz; = ; 1.9 dB C CE s opt T =25 C amb V output voltage d = 60 dB; I =30mA; V =8V; 425 mV O im C CE R =75 ; T =25 C; L amb f +f f = 793.25 MHz p q r LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 15 V CBO collector-emitter voltage open base 12 V V CEO V emitter-base voltage open collector 2V EBO I collector current (DC) 35 mA C P total power dissipation T 95 C; note 1 300 mW tot s T storage temperature 65 +150 C stg T junction temperature +175 C j Note 1. T is the temperature at the soldering point of the collector pin. s 1997 Oct 29 2