BFS17W,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION 3 handbook, 2 columns oscillator and IF amplifier in UHF and 1base VHF tuners. 2emitter 3 collector DESCRIPTION 12 Silicon NPN transistor in a plastic MBC870 Top view SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. Marking code: E1 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage 25 V CBO V collector-emitter voltage 15 V CEO I DC collector current 50 mA C P total power dissipation up to T =118 C note 1 300 mW tot s h DC current gain I =2mA V =1V 25 90 FE C CE f transition frequency I =25mA V =5V 1.6 GHz T C CE C collector capacitance I =0 V =10V f=1MHz 0.8 1.5 pF c E CB C feedback capacitance I =1mA V =5V f= 1MHz 0.75 pF re C CE T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector pin. s LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 2.5 V EBO I collector current (DC) 50 mA C P total power dissipation T =118 C note 1 300 mW tot s T storage temperature 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector pin. s 1995 Sep 04 2