BFR505T,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification 2000 May 17 Supersedes data of 2000 Mar 14NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION Low current consumption NPN transistor in a plastic SOT416 (SC-75) package. 3 High power gain lfpage Low noise figure PINNING High transition frequency Gold metallization ensures PIN DESCRIPTION 12 excellent reliability Top view MBK090 1 base SOT416 (SC-75) package. 2emitter 3 collector Marking code: N0. APPLICATIONS Low power amplifiers, oscillators and Fig.1 SOT416. mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE I DC collector current 18 mA C P total power dissipation T 75 C note 1 150 mW tot s h DC current gain I =5mA V =6V T =25 C 60 120 250 FE C CE j f transition frequency I =5mA V =6V f= 1GHz 9 GHz T C CE T =25 C amb G maximum unilateral power gain I =5mA V =6 V f = 900MHz 17 dB UM C CE =25 C T amb F noise figure I = 1.25 mA V =6V 1.2 1.7 dB C CE f = 900 MHz T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CE BE V emitter-base voltage open collector 2.5 V EBO I DC collector current 18 mA C P total power dissipation T 75 C note 1 150 mW tot s T storage temperature 65 +150 C stg T junction temperature 150 C j Note 1. T is the temperature at the soldering point of the collector pin. s 2000 May 17 2