X-On Electronics has gained recognition as a prominent supplier of BFR843EL3E6327XTSA1 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR843EL3E6327XTSA1 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR843EL3E6327XTSA1 Infineon

BFR843EL3E6327XTSA1 electronic component of Infineon
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Part No.BFR843EL3E6327XTSA1
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors RF BIP TRANSISTORS
Datasheet: BFR843EL3E6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3487 ea
Line Total: USD 0.35 
Availability - 11056
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10476
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3128
10 : USD 0.3088
25 : USD 0.3072
100 : USD 0.3051
250 : USD 0.302
500 : USD 0.299
1000 : USD 0.2947
3000 : USD 0.2904
6000 : USD 0.2861

28905
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2494

11056
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3487
10 : USD 0.3355
100 : USD 0.3311
1000 : USD 0.3113
2500 : USD 0.2882
5000 : USD 0.2706
10000 : USD 0.2618
15000 : USD 0.2321

70591
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1550
Multiples : 1
1550 : USD 0.3146

14550
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1550
Multiples : 1
1550 : USD 0.3146

10476
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 27
Multiples : 1
27 : USD 0.2861

87300
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 15000
Multiples : 15000
15000 : USD 0.3432

11601
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1550
Multiples : 1
1550 : USD 0.3146

28905
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 1
30 : USD 0.2494

   
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
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We are delighted to provide the BFR843EL3E6327XTSA1 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR843EL3E6327XTSA1 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Product description The BFR843EL3 is a low noise dual band pre-matched transistor in a low profile package for high speed and low power consumption applications. Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power and 1 kV HBM ESD hardness High transition frequency enables best in class noise performance at high frequencies: NF = 1 dB at 2.4 GHz, 1.8 V, 8 mA and 1.15 dB at 5.5 GHz, 1.8 V, 8 mA min High gain G = 24 dB at 2.4 GHz, 1.8 V, 15 mA and 21.5 dB at 5.5 GHz, 1.8 V, 15 mA ms OIP = 20.5 dBm at 2.4 GHz, 1.8 V, 15 mA and 20.5 dBm at 5.5 GHz, 1.8 V, 15 mA 3 Suitable for low voltage applications e.g. V = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding CC collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo...) and satellite C-band LNB (1st and 2nd stage LNA) Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR843EL3 / BFR843EL3E6327XTSA1 TSLP-3-10 1 = B 2 = C 3 = E T2 15000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v2.0 www.infineon.com 2018-09-26BFR843EL3 Low noise broadband pre-matched RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information TSLP-3-10 19 Revision history . 20 Disclaimer 21 Datasheet 2 v2.0 2018-09-26

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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