BFR740L3RH SiGe:C NPN RF bipolar transistor Product description The BFR740L3RH is a wideband RF heterojunction bipolar transistor (HBT) available in a low profile package. Feature list Low noise figure NF = 0.5 dB at 1.9 GHz 3 V, 6 mA 0.8 dB at 5.5 GHz, 3 V, 6 mA min High power gain G = 20 dB at 5.5 GHz, 3 V, 15 mA ms Low profile and small form factor leadless package Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR740L3RH /BFR740L3RHE6327XTSA1 TSLP-3-9 1 = B 2 = C 3 = E R9 15000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v3.0 www.infineon.com 2018-09-26BFR740L3RH SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information TSLP-3-9 . 20 Revision history . 21 Disclaimer 22 Datasheet 2 v3.0 2018-09-26