Document Number: MRFG35010A Freescale Semiconductor Rev. 2, 12/2008 Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. Typical Single-Carrier W-CDMA Performance: V = 12 Volts, I = DD DQ 140 mA, P = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.5 GHz, 10 W, 12 V out 3.84 MHz, PAR = 8.5 dB 0.01% Probability on CCDF. POWER FET Power Gain 10 dB GaAs PHEMT Drain Efficiency 25% ACPR 5 MHz Offset -43 dBc in 3.84 MHz Channel Bandwidth 10 Watts P1dB 3550 MHz, CW Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360D-02, STYLE 1 NI-360HF Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V 15 Vdc DSS Gate-Source Voltage V -5 Vdc GS RF Input Power P 33 dBm in Storage Temperature Range T -65 to +150 C stg (1) Channel Temperature T 175 C ch Table 2. Thermal Characteristics (1, 2) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 81C, 10 W CW Class AB 4.0 Case Temperature 79C, 1 W CW Class A 4.1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) III (Minimum) 1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Table 4. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Saturated Drain Current I 2.9 Adc DSS (V = 3.5 Vdc, V = 0 Vdc) DS GS Off State Leakage Current I < 1 100 Adc GSS (V = -0.4 Vdc, V = 0 Vdc) GS DS Off State Drain Current I 0.09 1 mAdc DSO (V = 12 Vdc, V = -2.2 Vdc) DS GS Off State Current I 5 15 mAdc DSX (V = 28.5 Vdc, V = -2.5 Vdc) DS GS Gate-Source Cut-off Voltage V -1.2 -0.8 -0.7 Vdc GS(th) (V = 3.5 Vdc, I = 15 mA) DS DS Quiescent Gate Voltage V -1.2 -0.8 -0.7 Vdc GS(Q) (V = 12 Vdc, I = 180 mA) DS D (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 12 Vdc, I = 140 mA, P = 1 W Avg., f = 3550 MHz, DD DQ out Single-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. PAR = 8.5 dB 0.01% Probability on CCDF. Power Gain G 9 10 dB ps Drain Efficiency 23 25 % D Adjacent Channel Power Ratio ACPR -43 -40 dBc Typical RF Performance (In Freescale Test Fixture, 50 ohm system) V = 12 Vdc, I = 140 mA, f = 3550 MHz DD DQ Output Power, 1 dB Compression Point, CW P1dB 10 W 1. Measurements made with device in test fixture. MRFG35010AR1 RF Device Data Freescale Semiconductor 2