DocumentNumber:MRFX1K80H NXPSemiconductors Rev. 1, 09/2018 Technical Data RFPowerLDMOSTransistor High Ruggedness N--Channel MRFX1K80H Enhancement--Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 400 MHz. 1.8400MHz,1800WCW,65V TypicalPerformance WIDEBAND RFPOWERLDMOSTRANSISTOR Frequency V DD P G out ps D (MHz) SignalType (V) (W) (dB) (%) (1) 27 CW 65 1800 CW 27.8 75.6 64 Pulse (100 sec,10%DutyCycle) 65 1800Peak 27.1 69.5 81.36 CW 62 1800 CW 25.1 78.7 (2,3) 87.5108 CW 60 1600 CW 23.6 82.5 123/128 Pulse (100 sec,10%DutyCycle) 65 1800Peak 25.9 69.0 NI--1230H--4S 144 CW 65 1800 CW 23.5 78.0 175 CW 60 1560 CW 23.5 75.9 174230 DVB--T (8k OFDM) 63 250 Avg. 21.3 43.3 (3) Doherty (4) 230 Pulse (100 sec,20%DutyCycle) 65 1800Peak 25.1 75.1 GateA31 DrainA 325 Pulse (12 sec,10%DutyCycle) 63 1700Peak 22.8 64.9 LoadMismatch/Ruggedness Frequency P Test in DrainB GateB42 SignalType VSWR (MHz) (W) Voltage Result (4) 230 Pulse >65:1 at all 14 Peak 65 No Device (100 sec, 20% Phase Angles (3 dB Degradation (Top View) Duty Cycle) Overdrive) Note: The backside of the package is the 1. Measured in 27 MHz reference circuit (page 6). source terminalforthe transistor. 2. Measured in 87.5108 MHz broadband reference circuit (page 11). 3. The values shown are the centerband performance numbers across the indicated Figure1.PinConnections frequency range. 4. Measured in 230 MHz production test fixture (page 17). Features Unmatched input and output allowing wide frequency range utilization Device can be used single--ended or in a push--pull configuration Qualified up to a maximum of 65 V operation DD Characterized from 30 to 65 V for extended power range High breakdown voltage for enhanced reliability Suitable for linear application with appropriate biasing Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation Lower thermal resistance option in over--molded plastic package: MRFX1K80N Included in NXP product longevity program with assured supply for a minimum of 15 years after launch TypicalApplications Industrial, scientific, medical (ISM) Radio and VHF TV broadcast Laser generation Aerospace Plasma generation HF communications Particleaccelerators Radar MRI, RF ablation and skin treatment Industrial heating, welding and drying systems 20172018 NXP B.V. MRFX1K80H RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +179 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 2247 W C D Derate above 25 C 11.2 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.09 C/W JC CW: Case Temperature 99 C, 1800 W CW, 65 Vdc, I =150 mA, 98 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.017 C/W JC Pulse: Case Temperature 65C, 1800 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 65 Vdc, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500 V Charge Device Model(perJESD22--C101) C3, passes 2000 V Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 179 193 Vdc (BR)DSS (V =0Vdc,I =100 mAdc) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 100 mAdc DSS (V =179 Vdc, V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 2.1 2.5 2.9 Vdc GS(th) (V =10Vdc,I =740 Adc) DS D Gate Quiescent Voltage V 2.4 2.8 3.2 Vdc GS(Q) (V =65Vdc,I =100 mAdc, Measured in FunctionalTest) DD D(A+B) (4) Drain--Source On--Voltage V 0.21 Vdc DS(on) (V =10Vdc,I =2.76Adc) GS D (4) Forward Transconductance g 44.7 S fs (V =10Vdc,I =43Adc) DS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTF calculator available at