DocumentNumber:MRFX600H NXPSemiconductors Rev. 0, 09/2018 Technical Data RFPowerLDMOSTransistors MRFX600H High Ruggedness N--Channel MRFX600HS Enhancement--Mode Lateral MOSFETs MRFX600GS ThesehighruggednessdevicesaredesignedforuseinhighVSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their 1.8400MHz,600WCW,65V unmatchedinputandoutputdesignsupportsfrequencyusefrom1.8to WIDEBAND 400 MHz. RFPOWERLDMOSTRANSISTORS TypicalPerformance Frequency V DD P G out ps D (MHz) SignalType (V) (W) (dB) (%) (1,2) 87.5108 CW 62 680 CW 21.3 83.0 NI--780H--4L (3) 230 Pulse 65 600 Peak 26.4 74.4 MRFX600H (100 sec, 20%Duty Cycle) LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result NI--780S--4L (3) 230 Pulse >65:1 at all 2.5 Peak 65 No Device MRFX600HS (100 sec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) 1. Measured in 87.5108 MHz broadband reference circuit (page 5). 2. The values shown are the centerband performance numbers across the indicated frequency range. NI--780GS--4L 3. Measured in 230 MHz production test fixture (page 10). MRFX600GS Features Unmatched input and output allowing wide frequency range utilization Output impedance fits a 4:1 transformer Device can be used single--ended or in a push--pull configuration GateA31 DrainA Qualified up to a maximum of 65 V operation DD Characterized from 30 to 65 V for extended power range High breakdown voltage for enhanced reliability GateB DrainB 42 Suitable for linear application with appropriate biasing Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation Included in NXP product longevity program with assured supply for a (Top View) minimum of 15 years after launch Note: The backside of the package is the source terminalforthe transistor. TypicalApplications Figure1.PinConnections Industrial, scientific, medical (ISM) Laser generation Plasma generation Particleaccelerators MRI, RF ablation and skin treatment Industrial heating, welding and dryingsystems Radio and VHF TV broadcast Aerospace HF communications Radar Mobile radio HF and VHF communications PMR base stations 2018NXPB.V. MRFX600HMRFX600HSMRFX600GS RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +179 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 1333 W C D Derate above 25 C 6.67 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.15 C/W JC CW: Case Temperature 75 C, 650 W CW, 62 Vdc, I =250 mA, 98 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.037 C/W JC Pulse: Case Temperature 73C, 600 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 65 Vdc, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJS--001--2017) Class 2, passes 2500 V Charge Device Model(perJS--002--2014) Class C3, passes 1000 V Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 179 193 Vdc (BR)DSS (V =0Vdc,I =100 mAdc) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 100 Adc DSS (V =179 Vdc, V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 2.1 2.5 2.9 Vdc GS(th) (V =10Vdc,I =277 Adc) DS D Gate Quiescent Voltage V 2.7 2.9 3.2 Vdc GS(Q) (V =65Vdc,I =100 mAdc, Measured in FunctionalTest) DD D (4) Drain--Source On--Voltage V 0.2 Vdc DS(on) (V =10Vdc,I =0.74Adc) GS D (4) Forward Transconductance g 33.6 S fs (V =10Vdc,I =32Adc) DS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at