DocumentNumber:A3T23H450W23S NXPSemiconductors Rev. 0, 08/2018 Technical Data RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET A3T23H450W23SR6 This87W asymmetricalDoherty RFpowerLDMOStransistorisdesigned for cellular base station applications requiring very wide instantaneous bandwidthcapability covering the frequency range of 2300 to 2400 MHz. 2300MHz 23002400MHz,87WAVG.,30V AIRFASTRFPOWERLDMOS Typical Doherty Single--Carrier W--CDMA Performance: V =30Vdc, DD TRANSISTOR I = 650 mA, V =0.65Vdc,P = 87 W Avg., Input Signal DQA GSB out PAR = 9.9dB 0.01%Probability onCCDF. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 2300 MHz 14.7 47.0 7.8 30.7 2350 MHz 15.1 46.4 7.6 31.7 2400 MHz 15.2 46.5 7.5 33.3 Features ACP--1230S--4L2S Advanced high performance in--package Doherty Designed for wide instantaneous bandwidth applications Greater negativegate--sourcevoltagerange for improved Class C operation Able to withstand extremely high output VSWR and broadband operating (2) 6 VBW A Carrier conditions Designedfor digital predistortionerror correctionsystems RF /V15 RF /V inA GSA outA DSA (1) RF /V24 RF /V inB GSB outB DSB Peaking (2) 3 VBW B (Top View) Figure1.PinConnections 1. Pin connections 4 and 5 are DCcoupled and RFindependent. 2. Device can operate with V current DD supplied through pin 3 and pin 6. 2018NXPB.V. A3T23H450W23SR6 RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +65 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J CW Operation T =25 C when DC current is fed through pin 3 and pin 6 CW 166 W C Derate above 25 C 1.0 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.15 C/W JC Case Temperature 78C, 87W Avg., W--CDMA, 30Vdc, I =650mA, DQA V =0.65 Vdc, 2350 MHz GSB Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJS--001--2017) 2 Charge Device Model(perJS--002--2014) C3 Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics -- SideA,Carrier Gate Threshold Voltage V 1.3 1.8 2.3 Vdc GS(th) (V =10Vdc,I =180 Adc) DS D Gate Quiescent Voltage V 2.2 2.6 3.0 Vdc GSA(Q) (V =30Vdc,I =650 mAdc, Measured in FunctionalTest) DD DA Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =1.8Adc) GS D OnCharacteristics -- SideB,Peaking Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =360 Adc) DS D Drain--Source On--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =3.6Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at