DocumentNumber:MRFE6VP61K25N FreescaleSemiconductor Rev. 2, 4/2015 Technical Data RFPowerLDMOSTransistors HighRuggedness N--Channel MRFE6VP61K25N Enhancement--ModeLateral MOSFETs MRFE6VP61K25GN ThesehighruggednessdevicesaredesignedforuseinhighVSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8to600MHz. 1.8600MHz,1250WCW,50V TypicalPerformance: V =50Vdc DD WIDEBAND RFPOWERLDMOSTRANSISTORS Frequency P G out ps D (MHz) SignalType (W) (dB) (%) (1,2) 87.5108 CW 1309 CW 24.1 77.6 (3) 230 Pulse 1250 Peak 23.0 72.3 (100 sec,20%Duty Cycle) OM--1230--4L LoadMismatch/Ruggedness PLASTIC MRE6VP61K25N Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (3) 230 Pulse >65:1 at all 11.5 Peak 50 NoDevice (100 sec,20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) OM--1230G--4L 1. Measured in 87.5108 MHz broadband reference circuit. PLASTIC 2. The values shown are the center band performance numbers across the indicated MRE6VP61K25GN frequency range. 3. Measured in 230 MHz narrowband test circuit. Features Unmatched Input and Output Allowing Wide Frequency Range Utilization Device can be used Single--Ended or in a Push--Pull Configuration GateA31 DrainA Qualified up to a Maximum of 50 V Operation DD Characterized from 30 to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing 42 DrainB GateB IntegratedESD ProtectionwithGreater Negative Gate--Source Voltage Range for ImprovedClass C Operation CharacterizedwithSeries Equivalent Large--Signal Impedance Parameters (Top View) Recommendeddrivers: AFT05MS004N (4W) or MRFE6VS25N (25W) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.PinConnections TypicalApplications Broadcast Aerospace FM broadcast VHF omnidirectional range(VOR) HF and VHF broadcast Weather radar Industrial, Scientific, Medical (ISM) Mobile Radio CO laser generation HF and VHF communications 2 Plasmaetching PMR basestations Particleaccelerators (synchrotrons) MRI Industrial heating/welding FreescaleSemiconductor, Inc., 2015. All rights reserved. MRFE6VP61K25NMRFE6VP61K25GN RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +133 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 3333 W C D Derate above 25 C 16.67 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.06 C/W JC CW: Case Temperature 109 C, 1250W CW, 50Vdc, I =245 mA, 98 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.016 C/W JC Pulse: Case Temperature 74C, 1250 W Peak, 100 sec Pulse Width, 20%Duty Cycle, I =100 mA, 230 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) B,passes 250V Charge Device Model(perJESD22--C101) IV, passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 Vdc (BR)DSS (V =0Vdc,I =100mAdc) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 20 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =1776 Adc) DS D Gate Quiescent Voltage V 1.9 2.4 2.9 Vdc GS(Q) (V =50Vdc,I =100 mAdc, Measured in FunctionalTest) DD D(A+B) (4) Drain--Source On--Voltage V 0.2 Vdc DS(on) (V =10Vdc,I =2Adc) GS D (4) Forward Transconductance g 28.0 S fs (V =10Vdc,I =30Adc) DS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at