DocumentNumber:MRFX035H NXPSemiconductors Rev. 0, 12/2018 Technical Data RFPowerLDMOSTransistor MRFX035H HighRuggedness N--Channel Enhancement--ModeLateral MOSFET This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched 1.8512MHz,35WCW,65V input and output design supports frequency use from 1.8 to 512 MHz. WIDEBAND RFPOWERLDMOSTRANSISTOR TypicalPerformance: V =65Vdc DD P Frequency G out ps D SignalType (W) (MHz) (dB) (%) (1,2) 1.854 CW 32 CW 24.1 58.1 (2) 30400 CW 26 CW 15.1 42.3 (3) 230 CW 35 CW 24.8 75.8 LoadMismatch/Ruggedness Frequency P Test in (MHz) SignalType VSWR (dBm) Voltage Result NI--360H--2SB (3) 230 CW >65:1 23.5 65 No Device at allPhase (3 dB Degradation Angles Overdrive) 1. Measured in 1.854 MHz broadband reference circuit (page 5). 2. The values shown are the minimum measured performance numbers across the indicated frequency range. 3. Measured in 230 MHz production test fixture (page 10). Gate21 Drain Features Unmatched input and output allowing wide frequency range utilization 50 ohm native output impedance Qualified up to a maximum of 65 V operation DD (Top View) Characterized from 30 to 65 V for extended power range Note: Thebacksideofthepackageis the High breakdown voltage for enhanced reliability source terminalforthe transistor. Suitable for linear application with appropriate biasing Figure1.PinConnections IntegratedESD protectionwithgreater negative gate--source voltage range for improved Class C operation Included in NXP product longevity program with assured supply for a minimum of 15years after launch TypicalApplications Industrial, scientific, medical (ISM) Laser generation Plasma generation Particleaccelerators MRI, RF ablation and skin treatment Industrial heating, weldinganddryingsystems Radio and VHF TV broadcast Aerospace HF communications Radar Mobile radio HF and VHF communications PMR basestations 2018NXPB.V. MRFX035H RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +179 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 154 W C D Derate above 25 C 0.769 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 1.3 C/W JC CW: Case Temperature 74.2 C, 35W CW, 65Vdc, I =15mA, 230MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJS--001--2017) 2, passes 2500V Charge Device Model(perJS--002--2014) C3, passes 1200 V Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--Source Leakage Current I 400 nAdc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 179 193 Vdc (BR)DSS (V =0Vdc,I =250 Adc) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 300 Adc DSS (V =179Vdc,V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1.7 2.75 3.0 Vdc GS(th) (V =10Vdc,I =640 Adc) DS D Gate Quiescent Voltage V 2.5 3.0 3.5 Vdc GS(Q) (V =65Vdc,I =15 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.17 Vdc DS(on) (V =10Vdc,I =100mAdc) GS D DynamicCharacteristics Reverse TransferCapacitance C 0.13 pF rss (V =65Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 13.7 pF oss (V =65Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 42.8 pF iss (V =65Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at