X-On Electronics has gained recognition as a prominent supplier of PTFB092707FH-V1-R0 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PTFB092707FH-V1-R0 RF MOSFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PTFB092707FH-V1-R0 Wolfspeed

PTFB092707FH-V1-R0 electronic component of Wolfspeed
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Part No.PTFB092707FH-V1-R0
Manufacturer: Wolfspeed
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors RF LDMOS FET
Datasheet: PTFB092707FH-V1-R0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 129.2762
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Type
Brand
Number Of Channels
Product Type
Factory Pack Quantity :
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We are delighted to provide the PTFB092707FH-V1-R0 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PTFB092707FH-V1-R0 and other electronic components in the RF MOSFET Transistors category and beyond.

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PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output match- ing, high gain and thermally-enhanced package with earless flange. PTFB092707FH Manufactured with Wolfspeed s advanced LDMOS process, this device Package H-37288L-4/2 provides excellent thermal performance and superior reliability. Features Two-carrier WCDMA Drive-up Broadband internal input and output matching V = 28 V, I = 2150 mA, = 925 MHz, DD DQ 3GPP WCDMA signal, 8 dB PAR, Typical pulsed CW performance (10 s pulse 10 MHz carrier spacing, 3.84 MHz BW width10%, duty cycle, class AB), 960 MHz, 28 V - Output power at P = 250 W 1dB 21 50 - Efficiency = 52% - Gain = 18.5 dB 20 40 Gain Typical single-carrier WCDMA performance, 960 MHz, 28 V, 7.5 dB PAR 0.01% CCDF, - Output power = 63 W 19 30 - Efficiency = 33% - Gain = 19.5 dB 18 20 - ACPR = 35 dBc 3.84 MHz Capable of handling 10:1 VSWR 28 V, 220 W 17 10 (CW) output power Efficiency Integrated ESD protection 16 b092707fh-gr1a 0 Low thermal resistance 29 33 37 41 45 49 53 Pb-free and RoHS compliant Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed test fixture) V = 28 V, I = 2150 mA, P = 60 W avg, = 960 MHz, 3GPP signal, 3.84 MHz channel bandwidth, 8 dB peak/average DD DQ OUT 0.01% CCDF, 10 MHz spacing Characteristic Symbol Min Typ Max Unit Gain G 18 19 dB ps Drain Efficiency h 28 29 % D Intermodulation Distortion IMD 34 33 dBc All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 06, 2020-06-02 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com discontinued product Gain (dB) Drain Efficiency (%)PTFB092707FH 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V( 65 V GS DS BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1 A DS GS DSS V = 63 V, V = 0 V I 10 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance V = 10 V, V = 0.1 V R 0.05 W GS DS DS(on) Operating Gate Voltage V = 28 V, I = 2150 mA V 2.5 3.9 4.5 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS Gate-Source Voltage V 6 to +10 V GS Junction Temperature T 200 C J Storage Temperature Range T 40 to +150 C STG Thermal Resistance (T = 70C, 220 W CW) R 0.214 C/W CASE qJC Ordering Information Type and Version Order Code Package and Description Shipping PTFB092707FH V1 R0 PTFB092707FH-V1-R0 H-37288L-4/2, earless flange Tape & Reel, 50 pcs PTFB092707FH V1 R250 PTFB092707FH-V1-R250 H-37288L-4/2, earless flange Tape & Reel, 250 pcs Rev. 06, 2020-06-02 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com discontinued product

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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