V 1700 V DS I 25C 72 A D C2M0045170P R 45 m DS(on) Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package TAB Optimized package with separate driver source pin Drain 8mm of creepage distance between drain and source High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Halogen Free, RoHS Compliant Benefits Drain (Pin 1, TAB) Reduce switching losses and minimize gate ringing 1 2 3 4 Higher system efficiency D S S G Reduce cooling requirements Increase power density Increase system switching frequency Gate (Pin 4) Driver Power Applications Source Source (Pin 3) (Pin 2) 1500V Solar Inverters Switch Mode Power Supplies Part Number Package Marking High Voltage DC/DC converters Pulsed Power Applications C2M0045170P TO-247-4 Plus C2M0045170P Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1700 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage (dynamic) -10/+25 V AC (f >1 Hz) Note: 1 V GSmax Gate - Source Voltage (Static) -5/+20 V Static Note: 2 V GSop 72 Fig. 19 V =20 V, T = 25C GS C I Continuous Drain Current A D 48 V =20 V, T = 100C GS C I Pulsed Drain Current 160 A Fig. 22 Pulse width t limited by T D(pulse) jmax P P Power Dissipation 520 W T =25C, T = 150 C Fig. 20 C J D -40 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L Note (1): When using MOSFE T Body Diode V = -5V/+25V GSmax Note (2): MOSFE T can also safely operate at 0/+20V 1 C2M0045170P Rev. -, 04-2018 Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 A 2.0 2.6 4 V V = V , I = 18mA DS GS D V Gate Threshold Voltage Fig. 11 GS(th) 1.8 V V = V , I = 18mA, T = 150 C DS GS D J I Zero Gate Voltage Drain Current 2 100 A V = 1700 V, V = 0 V DSS DS GS IGSS Gate-Source Leakage Current 600 nA VGS = 20 V, VDS = 0 V 45 59 VGS = 20 V, ID = 50 A Fig. R Drain-Source On-State Resistance m DS(on) 4,5,6 90 V = 20 V, I = 50 A, T = 150 C GS D J 21.7 V = 20 V, I = 50 A DS DS g Transconductance S Fig. 7 fs 24.4 V = 20 V, I = 50 A, T = 150 C DS DS J Ciss Input Capacitance 3672 VGS = 0 V Fig. C Output Capacitance 171 oss pF VDS = 1000 V 17,18 C Reverse Transfer Capacitance 6.7 rss f = 1 MHz AC V = 25 mV E C Stored Energy 105 J Fig 16 oss oss V = 1200 V, V = -5/20 V, DS GS E Turn-On Switching Energy (SiC Diode FWD) 0.67 ON Fig. 26, mJ I = 50A, R = 2.5, L= 105 H, D G(ext) 29b E Turn Off Switching Energy (SiC Diode FWD) 0.31 OFF T = 150 C, using SiC Diode as FWD J V = 1200 V, V = -5/20 V, DS GS E Turn-On Switching Energy (Body Diode FWD) 2.8 ON Fig. 26, mJ I = 50A, R = 2.5, L= 105 H, D G(ext) 29a E Turn Off Switching Energy (Body Diode FWD) 0.35 OFF T = 150 C, using MOSFET as FWD J t Turn-On Delay Time 35 d(on) V = 1200 V, V = -5/20 V DD GS I = 50 A, D t Rise Time 13 r Fig. 27, ns R = 2.5 , Timing relative to V G(ext) DS 29 td(off ) Turn-Off Delay Time 46 Inductive load tf Fall Time 10 , R Internal Gate Resistance 1.3 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 44 gs V = 1200 V, V = -5/20 V DS GS Q Gate to Drain Charge 57 nC I = 50 A Fig. 12 gd D Per IEC60747-8-4 pg 21 Qg Total Gate Charge 188 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 4.1 V V = - 5 V, I = 25 A Fig. 8, 9, GS SD V Diode Forward Voltage 10 SD 3.6 V V = - 5 V, I = 25 A, T = 150 C Note 1 GS SD J I Continuous Diode Forward Current 72 A T = 25 C, V = - 5 V Note 1 S C GS t Reverse Recovery Time 44 ns rr V = - 5 V, I = 50 A , V = 1200 V GS SD R Q Reverse Recovery Charge 2 C Note 1 dif/dt = 3000 A/s rr I Peak Reverse Recovery Current 60 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.22 0.24 Fig. 21 JC C/W R Thermal Resistance from Junction to Ambient 40 JC 2 C2M0045170P Rev. -, 04-2018