X-On Electronics has gained recognition as a prominent supplier of RD3H160SPFRATL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3H160SPFRATL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3H160SPFRATL ROHM

RD3H160SPFRATL electronic component of ROHM
RD3H160SPFRATL ROHM
RD3H160SPFRATL MOSFETs
RD3H160SPFRATL  Semiconductors

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See Product Specifications
Part No. RD3H160SPFRATL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Pch -45V Vdss -16A TO-252(DPAK); TO-252
Datasheet: RD3H160SPFRATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9 ea
Line Total: USD 1.9 
Availability - 383
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 1.3524
10 : USD 1.3162
30 : USD 0.9986
100 : USD 0.98

383
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 1.9
10 : USD 1.284
100 : USD 0.8932
500 : USD 0.7777
1000 : USD 0.726
2500 : USD 0.6952
5000 : USD 0.6677

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RD3H160SPFRATL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3H160SPFRATL and other electronic components in the MOSFETs category and beyond.

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RD3H160SPFRA Datasheet Pch -45V -16A Power MOSFET llOutline V -45V DSS DPAK R (Max.) 50m DS(on) TO-252 I 16A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant 6) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Basic ordering unit (pcs) 2500 Taping code TL Marking RD3H160SP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS *1 I Continuous drain current 16 A D *2 I Pulsed drain current 32 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 20 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/11 20180328 - Rev.001 RD3H160SPFRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - case R - - 6.25 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage V I = -1A (BR)DSS D Breakdown voltage - -50 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V , I = -1mA -1.0 - -3.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -16A - 35 50 GS D Static drain - source *4 R V = -4.5V, I = -8A - 45 63 m DS(on) GS D on - state resistance V = -4.0V, I = -8A - 50 70 GS D R Gate resistance f = 1MHz, open drain - 8.0 - G Forward Transfer *4 Y V = -10V, I = -8A 8 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 T =25 c *4 Pulsed www.rohm.com 2/11 20180328 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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