RD3H200SNTL1 ROHM

RD3H200SN Datasheet Nch 45V 20A Power MOSFET llOutline V 45V DSS DPAK R (Max.) 28m DS(on) TO-252 I 20A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Basic ordering unit (pcs) 2500 TL Taping code TL1 Marking RD3H200SN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 45 V DSS *1 I Continuous drain current 20 A D *2 I Pulsed drain current 40 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 20 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2018 ROHM Co., Ltd. All rights reserved. 20180521 - Rev.004 RD3H200SN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - case R - - 6.25 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V , I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 20A - 20 28 GS D Static drain - source *4 R V = 4.5V, I = 20A - 25 35 m DS(on) GS D on - state resistance V = 4V, I = 20A - 28 40 GS D R Gate resistance f = 1MHz, open drain - 5.3 - G Forward Transfer *4 Y V = 10V, I = 20A 10 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 T =25 C *4 Pulsed www.rohm.com 2/12 20180521 - Rev.004 2018 ROHM Co., Ltd. All rights reserved.