RD3H080SP Datasheet Pch -45V -8A Power MOSFET llOutline V -45V DSS DPAK R (Max.) 91m DS(on) TO-252 I 8A D P 15W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Basic ordering unit (pcs) 2500 TL Taping code TL1 Marking RD3H080SP llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS *1 I Continuous drain current 8 A D *2 I Pulsed drain current 16 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 15 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2018 ROHM Co., Ltd. All rights reserved. 20180611 - Rev.005 RD3H080SP Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - case R - - 8.33 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -50 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V , I = -1mA -1.0 - -3.0 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -8A - 65 91 GS D Static drain - source *4 R V = -4.5V, I = -8A - 95 133 m DS(on) GS D on - state resistance V = -4.0V, I = -8A - 105 147 GS D R Gate resistance f = 1MHz, open drain - 8.8 - G Forward Transfer *4 Y V = -10V, I = -8A 6.0 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 T =25 C *4 Pulsed www.rohm.com 2/12 20180611 - Rev.005 2018 ROHM Co., Ltd. All rights reserved.