X-On Electronics has gained recognition as a prominent supplier of RD3L150SNTL1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. RD3L150SNTL1 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RD3L150SNTL1 ROHM

Hot RD3L150SNTL1 electronic component of ROHM
RD3L150SNTL1 ROHM
RD3L150SNTL1 MOSFETs
RD3L150SNTL1  Semiconductors

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See Product Specifications
Part No. RD3L150SNTL1
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 60V 15A TO-252 (DPAK)
Datasheet: RD3L150SNTL1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7716 ea
Line Total: USD 0.77 
Availability - 2414
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2414
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7716
10 : USD 0.6895
30 : USD 0.5559
100 : USD 0.4687
500 : USD 0.4484
1000 : USD 0.4389

2573
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.65
10 : USD 1.1052
100 : USD 0.7326
500 : USD 0.5962
1000 : USD 0.5478
2500 : USD 0.5115
5000 : USD 0.4906

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RD3L150SNTL1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RD3L150SNTL1 and other electronic components in the MOSFETs category and beyond.

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RD3L150SN Datasheet Nch 60V 15A Power MOSFET llOutline V 60V DSS DPAK R (Max.) 40m DS(on) TO-252 I 15A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Basic ordering unit (pcs) 2500 TL Taping code TL1 Marking RD3L150SN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 I Continuous drain current 15 A D *2 I Pulsed drain current 30 A DP V Gate - Source voltage 20 V GSS *3 P Power dissipation 20 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/12 2018 ROHM Co., Ltd. All rights reserved. 20180404 - Rev.004 RD3L150SN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - case R - - 6.25 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 63.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V , I = 1mA 1.0 - 3.0 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -4.4 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 15A - 28 40 GS D Static drain - source *4 R V = 4.5V, I = 15A - 33 47 m DS(on) GS D on - state resistance V = 4.0V, I = 15A - 36 51 GS D R Gate resistance f = 1MHz, open drain - 4.2 - G Forward Transfer *4 Y V = 10V, I = 15A 7 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw10s , Duty cycle 1% *3 T =25 c *4 Pulsed www.rohm.com 2/12 20180404 - Rev.004 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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